STW48N60DM2 STMicroelectronics
Hersteller: STMicroelectronicsDescription: MOSFET N-CH 600V 40A TO247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 40A (Tc)
Rds On (Max) @ Id, Vgs: 79mOhm @ 20A, 10V
Power Dissipation (Max): 300W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-247-3
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 70 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3250 pF @ 100 V
auf Bestellung 807 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis ohne MwSt |
|---|---|
| 2+ | 9.43 EUR |
| 30+ | 7.48 EUR |
| 120+ | 6.41 EUR |
| 510+ | 5.7 EUR |
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Technische Details STW48N60DM2 STMicroelectronics
Description: MOSFET N-CH 600V 40A TO247, Packaging: Tube, Package / Case: TO-247-3, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 40A (Tc), Rds On (Max) @ Id, Vgs: 79mOhm @ 20A, 10V, Power Dissipation (Max): 300W (Tc), Vgs(th) (Max) @ Id: 5V @ 250µA, Supplier Device Package: TO-247-3, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±25V, Drain to Source Voltage (Vdss): 600 V, Gate Charge (Qg) (Max) @ Vgs: 70 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 3250 pF @ 100 V.
Weitere Produktangebote STW48N60DM2 nach Preis ab 4.75 EUR bis 9.77 EUR
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STW48N60DM2 | Hersteller : STMicroelectronics |
MOSFETs N-channel 600 V, 0.065 Ohm typ 40 A MDmesh DM2 Power MOSFET |
auf Bestellung 836 Stücke: Lieferzeit 10-14 Tag (e) |
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STW48N60DM2 | Hersteller : STMicroelectronics |
Trans MOSFET N-CH 600V 40A 3-Pin(3+Tab) TO-247 Tube |
auf Bestellung 600 Stücke: Lieferzeit 14-21 Tag (e) |
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| STW48N60DM2 | Hersteller : STMicroelectronics |
Trans MOSFET N-CH 600V 40A 3-Pin(3+Tab) TO-247 Tube |
Produkt ist nicht verfügbar |
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| STW48N60DM2 | Hersteller : STMicroelectronics |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 600V; 25A; Idm: 160A; 300W; TO247 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 600V Drain current: 25A Pulsed drain current: 160A Power dissipation: 300W Case: TO247 Gate-source voltage: ±25V On-state resistance: 65mΩ Mounting: THT Gate charge: 70nC Kind of package: tube Kind of channel: enhanced Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
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| STW48N60DM2 | Hersteller : STMicroelectronics |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 600V; 25A; Idm: 160A; 300W; TO247 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 600V Drain current: 25A Pulsed drain current: 160A Power dissipation: 300W Case: TO247 Gate-source voltage: ±25V On-state resistance: 65mΩ Mounting: THT Gate charge: 70nC Kind of package: tube Kind of channel: enhanced |
Produkt ist nicht verfügbar |