STW45N65M5 STMicroelectronics
auf Bestellung 836 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl | Preis ohne MwSt |
---|---|
1+ | 12.51 EUR |
10+ | 9.22 EUR |
25+ | 9.08 EUR |
100+ | 7.53 EUR |
250+ | 7.22 EUR |
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Technische Details STW45N65M5 STMicroelectronics
Description: MOSFET N-CH 650V 35A TO247, Packaging: Tube, Package / Case: TO-247-3, Mounting Type: Through Hole, Operating Temperature: 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 35A (Tc), Rds On (Max) @ Id, Vgs: 78mOhm @ 19.5A, 10V, Power Dissipation (Max): 210W (Tc), Vgs(th) (Max) @ Id: 5V @ 250µA, Supplier Device Package: TO-247-3, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 650 V, Gate Charge (Qg) (Max) @ Vgs: 91 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 3375 pF @ 100 V.
Weitere Produktangebote STW45N65M5 nach Preis ab 6.7 EUR bis 14.8 EUR
Foto | Bezeichnung | Hersteller | Beschreibung |
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STW45N65M5 | Hersteller : STMicroelectronics |
Description: MOSFET N-CH 650V 35A TO247 Packaging: Tube Package / Case: TO-247-3 Mounting Type: Through Hole Operating Temperature: 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 35A (Tc) Rds On (Max) @ Id, Vgs: 78mOhm @ 19.5A, 10V Power Dissipation (Max): 210W (Tc) Vgs(th) (Max) @ Id: 5V @ 250µA Supplier Device Package: TO-247-3 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 650 V Gate Charge (Qg) (Max) @ Vgs: 91 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 3375 pF @ 100 V |
auf Bestellung 1060 Stücke: Lieferzeit 10-14 Tag (e) |
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STW45N65M5 | Hersteller : STMicroelectronics | Trans MOSFET N-CH 650V 35A 3-Pin(3+Tab) TO-247 Tube |
auf Bestellung 440 Stücke: Lieferzeit 14-21 Tag (e) |
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STW45N65M5 | Hersteller : STMICROELECTRONICS |
Description: STMICROELECTRONICS - STW45N65M5 - Leistungs-MOSFET, n-Kanal, 650 V, 35 A, 0.067 ohm, TO-247, Durchsteckmontage tariffCode: 85412900 Drain-Source-Spannung Vds: 650V rohsCompliant: YES Dauer-Drainstrom Id: 35A hazardous: false rohsPhthalatesCompliant: YES usEccn: EAR99 Gate-Source-Schwellenspannung, max.: 4V euEccn: NLR Verlustleistung: 210W Anzahl der Pins: 3Pin(s) productTraceability: Yes-Date/Lot Code Rds(on)-Prüfspannung: 10V Betriebstemperatur, max.: 150°C Drain-Source-Durchgangswiderstand: 0.067ohm SVHC: No SVHC (23-Jan-2024) |
auf Bestellung 4178 Stücke: Lieferzeit 14-21 Tag (e) |
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STW45N65M5 | Hersteller : STMicroelectronics | Trans MOSFET N-CH 650V 35A 3-Pin(3+Tab) TO-247 Tube |
Produkt ist nicht verfügbar |
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STW45N65M5 | Hersteller : STMicroelectronics |
Category: THT N channel transistors Description: Transistor: N-MOSFET; MDmesh™ V; unipolar; 650V; 22A; 210W; TO247 Type of transistor: N-MOSFET Technology: MDmesh™ V Polarisation: unipolar Drain-source voltage: 650V Drain current: 22A Power dissipation: 210W Case: TO247 Gate-source voltage: ±20V On-state resistance: 78mΩ Mounting: THT Kind of package: tube Kind of channel: enhanced Features of semiconductor devices: ESD protected gate Anzahl je Verpackung: 600 Stücke |
Produkt ist nicht verfügbar |
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STW45N65M5 | Hersteller : STMicroelectronics |
Category: THT N channel transistors Description: Transistor: N-MOSFET; MDmesh™ V; unipolar; 650V; 22A; 210W; TO247 Type of transistor: N-MOSFET Technology: MDmesh™ V Polarisation: unipolar Drain-source voltage: 650V Drain current: 22A Power dissipation: 210W Case: TO247 Gate-source voltage: ±20V On-state resistance: 78mΩ Mounting: THT Kind of package: tube Kind of channel: enhanced Features of semiconductor devices: ESD protected gate |
Produkt ist nicht verfügbar |