STPSC6H12B-TR1 STMicroelectronics
Hersteller: STMicroelectronics
Description: DIODE SIL CARBIDE 1.2KV 6A DPAK
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 330pF @ 0V, 1MHz
Current - Average Rectified (Io): 6A
Supplier Device Package: DPAK
Operating Temperature - Junction: -40°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 1200 V
Voltage - Forward (Vf) (Max) @ If: 1.9 V @ 6 A
Current - Reverse Leakage @ Vr: 400 µA @ 1200 V
Description: DIODE SIL CARBIDE 1.2KV 6A DPAK
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 330pF @ 0V, 1MHz
Current - Average Rectified (Io): 6A
Supplier Device Package: DPAK
Operating Temperature - Junction: -40°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 1200 V
Voltage - Forward (Vf) (Max) @ If: 1.9 V @ 6 A
Current - Reverse Leakage @ Vr: 400 µA @ 1200 V
auf Bestellung 5000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl | Preis ohne MwSt |
---|---|
2500+ | 2.49 EUR |
5000+ | 2.39 EUR |
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Technische Details STPSC6H12B-TR1 STMicroelectronics
Description: DIODE SIL CARBIDE 1.2KV 6A DPAK, Packaging: Tape & Reel (TR), Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63, Mounting Type: Surface Mount, Speed: No Recovery Time > 500mA (Io), Reverse Recovery Time (trr): 0 ns, Technology: SiC (Silicon Carbide) Schottky, Capacitance @ Vr, F: 330pF @ 0V, 1MHz, Current - Average Rectified (Io): 6A, Supplier Device Package: DPAK, Operating Temperature - Junction: -40°C ~ 175°C, Part Status: Active, Voltage - DC Reverse (Vr) (Max): 1200 V, Voltage - Forward (Vf) (Max) @ If: 1.9 V @ 6 A, Current - Reverse Leakage @ Vr: 400 µA @ 1200 V.
Weitere Produktangebote STPSC6H12B-TR1 nach Preis ab 2.46 EUR bis 5.12 EUR
Foto | Bezeichnung | Hersteller | Beschreibung |
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STPSC6H12B-TR1 | Hersteller : STMicroelectronics | SiC Schottky Diodes 1200V 6A Schottky 1.55V Vf 30pF 29nC |
auf Bestellung 2240 Stücke: Lieferzeit 10-14 Tag (e) |
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STPSC6H12B-TR1 | Hersteller : STMicroelectronics |
Description: DIODE SIL CARBIDE 1.2KV 6A DPAK Packaging: Cut Tape (CT) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Speed: No Recovery Time > 500mA (Io) Reverse Recovery Time (trr): 0 ns Technology: SiC (Silicon Carbide) Schottky Capacitance @ Vr, F: 330pF @ 0V, 1MHz Current - Average Rectified (Io): 6A Supplier Device Package: DPAK Operating Temperature - Junction: -40°C ~ 175°C Part Status: Active Voltage - DC Reverse (Vr) (Max): 1200 V Voltage - Forward (Vf) (Max) @ If: 1.9 V @ 6 A Current - Reverse Leakage @ Vr: 400 µA @ 1200 V |
auf Bestellung 7713 Stücke: Lieferzeit 10-14 Tag (e) |
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STPSC6H12B-TR1 | Hersteller : STMicroelectronics |
Category: SMD Schottky diodes Description: Diode: Schottky rectifying; SMD; 1.2kV; 6A; D2PAKHV; reel,tape Type of diode: Schottky rectifying Mounting: SMD Max. off-state voltage: 1.2kV Load current: 6A Semiconductor structure: single diode Case: D2PAKHV Max. forward voltage: 2.6V Max. forward impulse current: 30A Kind of package: reel; tape Anzahl je Verpackung: 2500 Stücke |
Produkt ist nicht verfügbar |
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STPSC6H12B-TR1 | Hersteller : STMicroelectronics |
Category: SMD Schottky diodes Description: Diode: Schottky rectifying; SMD; 1.2kV; 6A; D2PAKHV; reel,tape Type of diode: Schottky rectifying Mounting: SMD Max. off-state voltage: 1.2kV Load current: 6A Semiconductor structure: single diode Case: D2PAKHV Max. forward voltage: 2.6V Max. forward impulse current: 30A Kind of package: reel; tape |
Produkt ist nicht verfügbar |