STPSC6H065DLF STMicroelectronics
Hersteller: STMicroelectronics
Description: DIODE SIL CARB 650V 6A POWERFLAT
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 350pF @ 0V, 1MHz
Current - Average Rectified (Io): 6A
Supplier Device Package: PowerFlat™ (8x8) HV
Operating Temperature - Junction: -40°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 650 V
Voltage - Forward (Vf) (Max) @ If: 1.55 V @ 6 A
Current - Reverse Leakage @ Vr: 60 µA @ 650 V
Description: DIODE SIL CARB 650V 6A POWERFLAT
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 350pF @ 0V, 1MHz
Current - Average Rectified (Io): 6A
Supplier Device Package: PowerFlat™ (8x8) HV
Operating Temperature - Junction: -40°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 650 V
Voltage - Forward (Vf) (Max) @ If: 1.55 V @ 6 A
Current - Reverse Leakage @ Vr: 60 µA @ 650 V
auf Bestellung 6000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl | Preis ohne MwSt |
---|---|
3000+ | 1.9 EUR |
6000+ | 1.83 EUR |
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Technische Details STPSC6H065DLF STMicroelectronics
Description: DIODE SIL CARB 650V 6A POWERFLAT, Packaging: Tape & Reel (TR), Package / Case: 8-PowerVDFN, Mounting Type: Surface Mount, Speed: No Recovery Time > 500mA (Io), Reverse Recovery Time (trr): 0 ns, Technology: SiC (Silicon Carbide) Schottky, Capacitance @ Vr, F: 350pF @ 0V, 1MHz, Current - Average Rectified (Io): 6A, Supplier Device Package: PowerFlat™ (8x8) HV, Operating Temperature - Junction: -40°C ~ 175°C, Part Status: Active, Voltage - DC Reverse (Vr) (Max): 650 V, Voltage - Forward (Vf) (Max) @ If: 1.55 V @ 6 A, Current - Reverse Leakage @ Vr: 60 µA @ 650 V.
Weitere Produktangebote STPSC6H065DLF nach Preis ab 1.83 EUR bis 4.22 EUR
Foto | Bezeichnung | Hersteller | Beschreibung |
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STPSC6H065DLF | Hersteller : STMicroelectronics | SiC Schottky Diodes 6 A, 650 V SiC Power Schottky Diode |
auf Bestellung 1427 Stücke: Lieferzeit 10-14 Tag (e) |
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STPSC6H065DLF | Hersteller : STMicroelectronics |
Description: DIODE SIL CARB 650V 6A POWERFLAT Packaging: Cut Tape (CT) Package / Case: 8-PowerVDFN Mounting Type: Surface Mount Speed: No Recovery Time > 500mA (Io) Reverse Recovery Time (trr): 0 ns Technology: SiC (Silicon Carbide) Schottky Capacitance @ Vr, F: 350pF @ 0V, 1MHz Current - Average Rectified (Io): 6A Supplier Device Package: PowerFlat™ (8x8) HV Operating Temperature - Junction: -40°C ~ 175°C Part Status: Active Voltage - DC Reverse (Vr) (Max): 650 V Voltage - Forward (Vf) (Max) @ If: 1.55 V @ 6 A Current - Reverse Leakage @ Vr: 60 µA @ 650 V |
auf Bestellung 10736 Stücke: Lieferzeit 10-14 Tag (e) |
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STPSC6H065DLF | Hersteller : STMicroelectronics | Rectifier Diode Schottky Si 650V 6A 4-Pin Power Flat EP T/R |
Produkt ist nicht verfügbar |
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STPSC6H065DLF | Hersteller : STMicroelectronics |
Category: SMD Schottky diodes Description: Diode: Schottky rectifying; SMD; 650V; 6A; PowerFLAT; reel,tape Type of diode: Schottky rectifying Mounting: SMD Max. off-state voltage: 650V Load current: 6A Max. load current: 25A Semiconductor structure: single diode Case: PowerFLAT Max. forward voltage: 1.95V Max. forward impulse current: 600A Leakage current: 0.25mA Kind of package: reel; tape Anzahl je Verpackung: 3000 Stücke |
Produkt ist nicht verfügbar |
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STPSC6H065DLF | Hersteller : STMicroelectronics |
Category: SMD Schottky diodes Description: Diode: Schottky rectifying; SMD; 650V; 6A; PowerFLAT; reel,tape Type of diode: Schottky rectifying Mounting: SMD Max. off-state voltage: 650V Load current: 6A Max. load current: 25A Semiconductor structure: single diode Case: PowerFLAT Max. forward voltage: 1.95V Max. forward impulse current: 600A Leakage current: 0.25mA Kind of package: reel; tape |
Produkt ist nicht verfügbar |