STPSC2H065B-TR STMicroelectronics
Hersteller: STMicroelectronicsDescription: DIODE SIL CARBIDE 650V 2A DPAK
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Speed: No Recovery Time > 500mA (Io)
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 135pF @ 0V, 1MHz
Current - Average Rectified (Io): 2A
Supplier Device Package: DPAK
Operating Temperature - Junction: -40°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 650 V
Voltage - Forward (Vf) (Max) @ If: 1.55 V @ 2 A
Current - Reverse Leakage @ Vr: 20 µA @ 650 V
auf Bestellung 2500 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis ohne MwSt |
|---|---|
| 2500+ | 1.11 EUR |
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Technische Details STPSC2H065B-TR STMicroelectronics
Description: DIODE SIL CARBIDE 650V 2A DPAK, Packaging: Tape & Reel (TR), Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63, Mounting Type: Surface Mount, Speed: No Recovery Time > 500mA (Io), Technology: SiC (Silicon Carbide) Schottky, Capacitance @ Vr, F: 135pF @ 0V, 1MHz, Current - Average Rectified (Io): 2A, Supplier Device Package: DPAK, Operating Temperature - Junction: -40°C ~ 175°C, Voltage - DC Reverse (Vr) (Max): 650 V, Voltage - Forward (Vf) (Max) @ If: 1.55 V @ 2 A, Current - Reverse Leakage @ Vr: 20 µA @ 650 V.
Weitere Produktangebote STPSC2H065B-TR nach Preis ab 0.96 EUR bis 2.68 EUR
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STPSC2H065B-TR | Hersteller : STMicroelectronics |
Description: DIODE SIL CARBIDE 650V 2A DPAK Packaging: Cut Tape (CT) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Speed: No Recovery Time > 500mA (Io) Technology: SiC (Silicon Carbide) Schottky Capacitance @ Vr, F: 135pF @ 0V, 1MHz Current - Average Rectified (Io): 2A Supplier Device Package: DPAK Operating Temperature - Junction: -40°C ~ 175°C Voltage - DC Reverse (Vr) (Max): 650 V Voltage - Forward (Vf) (Max) @ If: 1.55 V @ 2 A Current - Reverse Leakage @ Vr: 20 µA @ 650 V |
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