STPSC20065D STMicroelectronics
Hersteller: STMicroelectronics
Description: DIODE SIL CARB 650V 20A TO220AC
Packaging: Tube
Package / Case: TO-220-2
Mounting Type: Through Hole
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 1250pF @ 0V, 1MHz
Current - Average Rectified (Io): 20A
Supplier Device Package: TO-220AC
Operating Temperature - Junction: -40°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 650 V
Voltage - Forward (Vf) (Max) @ If: 1.45 V @ 20 A
Current - Reverse Leakage @ Vr: 300 µA @ 650 V
Description: DIODE SIL CARB 650V 20A TO220AC
Packaging: Tube
Package / Case: TO-220-2
Mounting Type: Through Hole
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 1250pF @ 0V, 1MHz
Current - Average Rectified (Io): 20A
Supplier Device Package: TO-220AC
Operating Temperature - Junction: -40°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 650 V
Voltage - Forward (Vf) (Max) @ If: 1.45 V @ 20 A
Current - Reverse Leakage @ Vr: 300 µA @ 650 V
auf Bestellung 990 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl | Preis ohne MwSt |
---|---|
2+ | 9.24 EUR |
10+ | 7.75 EUR |
100+ | 6.27 EUR |
500+ | 5.57 EUR |
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Technische Details STPSC20065D STMicroelectronics
Description: DIODE SIL CARB 650V 20A TO220AC, Packaging: Tube, Package / Case: TO-220-2, Mounting Type: Through Hole, Speed: No Recovery Time > 500mA (Io), Reverse Recovery Time (trr): 0 ns, Technology: SiC (Silicon Carbide) Schottky, Capacitance @ Vr, F: 1250pF @ 0V, 1MHz, Current - Average Rectified (Io): 20A, Supplier Device Package: TO-220AC, Operating Temperature - Junction: -40°C ~ 175°C, Part Status: Active, Voltage - DC Reverse (Vr) (Max): 650 V, Voltage - Forward (Vf) (Max) @ If: 1.45 V @ 20 A, Current - Reverse Leakage @ Vr: 300 µA @ 650 V.
Weitere Produktangebote STPSC20065D nach Preis ab 4.65 EUR bis 9.56 EUR
Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
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STPSC20065D | Hersteller : STMicroelectronics | SiC Schottky Diodes 650 V power Schottky silicon carbide diode |
auf Bestellung 2630 Stücke: Lieferzeit 10-14 Tag (e) |
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STPSC20065D | Hersteller : STMicroelectronics | Diode Schottky SiC 650V 20A 2-Pin(2+Tab) TO-220AC Tube |
Produkt ist nicht verfügbar |
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STPSC20065D | Hersteller : STMicroelectronics | Diode Schottky SiC 650V 20A 2-Pin(2+Tab) TO-220AC Tube |
Produkt ist nicht verfügbar |
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STPSC20065D | Hersteller : STMicroelectronics | Diode Schottky SiC 650V 20A 2-Pin(2+Tab) TO-220AC Tube |
Produkt ist nicht verfügbar |
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STPSC20065D | Hersteller : STMicroelectronics |
Category: THT Schottky diodes Description: Diode: Schottky rectifying; THT; 650V; 20A; TO220AC; Ufmax: 1.65V Type of diode: Schottky rectifying Mounting: THT Max. off-state voltage: 650V Load current: 20A Semiconductor structure: single diode Case: TO220AC Max. forward voltage: 1.65V Max. load current: 40A Max. forward impulse current: 0.4kA Leakage current: 2mA Kind of package: tube Heatsink thickness: 1.23...1.32mm Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
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STPSC20065D | Hersteller : STMicroelectronics |
Category: THT Schottky diodes Description: Diode: Schottky rectifying; THT; 650V; 20A; TO220AC; Ufmax: 1.65V Type of diode: Schottky rectifying Mounting: THT Max. off-state voltage: 650V Load current: 20A Semiconductor structure: single diode Case: TO220AC Max. forward voltage: 1.65V Max. load current: 40A Max. forward impulse current: 0.4kA Leakage current: 2mA Kind of package: tube Heatsink thickness: 1.23...1.32mm |
Produkt ist nicht verfügbar |