STP34NM60ND STMicroelectronics
auf Bestellung 699 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl | Preis ohne MwSt |
---|---|
1+ | 10.88 EUR |
10+ | 10.81 EUR |
25+ | 9.66 EUR |
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Technische Details STP34NM60ND STMicroelectronics
Description: MOSFET N-CH 600V 29A TO220, Packaging: Tube, Package / Case: TO-220-3, Mounting Type: Through Hole, Operating Temperature: 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 29A (Tc), Rds On (Max) @ Id, Vgs: 110mOhm @ 14.5A, 10V, Power Dissipation (Max): 190W (Tc), Vgs(th) (Max) @ Id: 5V @ 250µA, Supplier Device Package: TO-220, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±25V, Drain to Source Voltage (Vdss): 600 V, Gate Charge (Qg) (Max) @ Vgs: 80.4 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 2785 pF @ 50 V.
Weitere Produktangebote STP34NM60ND nach Preis ab 8.96 EUR bis 12.11 EUR
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STP34NM60ND | Hersteller : STMicroelectronics |
Description: MOSFET N-CH 600V 29A TO220 Packaging: Tube Package / Case: TO-220-3 Mounting Type: Through Hole Operating Temperature: 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 29A (Tc) Rds On (Max) @ Id, Vgs: 110mOhm @ 14.5A, 10V Power Dissipation (Max): 190W (Tc) Vgs(th) (Max) @ Id: 5V @ 250µA Supplier Device Package: TO-220 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±25V Drain to Source Voltage (Vdss): 600 V Gate Charge (Qg) (Max) @ Vgs: 80.4 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2785 pF @ 50 V |
auf Bestellung 934 Stücke: Lieferzeit 10-14 Tag (e) |
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STP34NM60ND | Hersteller : STMicroelectronics | Trans MOSFET N-CH 600V 29A 3-Pin(3+Tab) TO-220AB Tube |
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STP34NM60ND | Hersteller : STMicroelectronics | Trans MOSFET N-CH Si 600V 29A 3-Pin(3+Tab) TO-220AB Tube |
Produkt ist nicht verfügbar |
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STP34NM60ND | Hersteller : STMicroelectronics | Trans MOSFET N-CH 600V 29A 3-Pin(3+Tab) TO-220AB Tube |
Produkt ist nicht verfügbar |
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STP34NM60ND | Hersteller : STMicroelectronics |
Category: THT N channel transistors Description: Transistor: N-MOSFET; MDmesh™ M5; unipolar; 600V; 18A; Idm: 116A Type of transistor: N-MOSFET Technology: MDmesh™ M5 Polarisation: unipolar Drain-source voltage: 600V Drain current: 18A Pulsed drain current: 116A Power dissipation: 190W Case: TO220-3 Gate-source voltage: ±25V On-state resistance: 0.11Ω Mounting: THT Gate charge: 80.4nC Kind of package: tube Kind of channel: enhanced Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
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STP34NM60ND | Hersteller : STMicroelectronics |
Category: THT N channel transistors Description: Transistor: N-MOSFET; MDmesh™ M5; unipolar; 600V; 18A; Idm: 116A Type of transistor: N-MOSFET Technology: MDmesh™ M5 Polarisation: unipolar Drain-source voltage: 600V Drain current: 18A Pulsed drain current: 116A Power dissipation: 190W Case: TO220-3 Gate-source voltage: ±25V On-state resistance: 0.11Ω Mounting: THT Gate charge: 80.4nC Kind of package: tube Kind of channel: enhanced |
Produkt ist nicht verfügbar |