Technische Details STP25NM50N ST
Description: MOSFET N-CH 500V 22A TO220AB, Packaging: Tube, Package / Case: TO-220-3, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 22A (Tc), Rds On (Max) @ Id, Vgs: 140mOhm @ 11A, 10V, Power Dissipation (Max): 160W (Tc), Vgs(th) (Max) @ Id: 4V @ 250µA, Supplier Device Package: TO-220, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±25V, Drain to Source Voltage (Vdss): 500 V, Gate Charge (Qg) (Max) @ Vgs: 84 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 2565 pF @ 25 V.
Weitere Produktangebote STP25NM50N nach Preis ab 4.52 EUR bis 5.48 EUR
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STP25NM50N | Hersteller : ST | 10+ SOP16 |
auf Bestellung 5000 Stücke: Lieferzeit 21-28 Tag (e) |
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STP25NM50N Produktcode: 40855 |
Hersteller : ST |
Transistoren > MOSFET N-CH Uds,V: 550 Idd,A: 21.05.2015 Rds(on), Ohm: 0.150 Ciss, pF/Qg, nC: 2280/ ZCODE: 8541290010 |
Produkt ist nicht verfügbar
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STP25NM50N | Hersteller : STMicroelectronics | Trans MOSFET N-CH 500V 22A 3-Pin(3+Tab) TO-220AB Tube |
Produkt ist nicht verfügbar |
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STP25NM50N | Hersteller : STMicroelectronics |
Description: MOSFET N-CH 500V 22A TO220AB Packaging: Tube Package / Case: TO-220-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 22A (Tc) Rds On (Max) @ Id, Vgs: 140mOhm @ 11A, 10V Power Dissipation (Max): 160W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: TO-220 Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±25V Drain to Source Voltage (Vdss): 500 V Gate Charge (Qg) (Max) @ Vgs: 84 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2565 pF @ 25 V |
Produkt ist nicht verfügbar |
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STP25NM50N | Hersteller : STMicroelectronics | MOSFET N-CHANNEL MOSFET Power MDmesh |
Produkt ist nicht verfügbar |