STP15N65M5 STMicroelectronics
Hersteller: STMicroelectronics
Description: MOSFET N CH 650V 11A TO220
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 11A (Tc)
Rds On (Max) @ Id, Vgs: 340mOhm @ 5.5A, 10V
Power Dissipation (Max): 125W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-220
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 22 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 810 pF @ 100 V
Voltage Coupled to Gate Charge (Qg) (Max) @ Vgs: 10
Voltage Coupled to Input Capacitance (Ciss) (Max) @ Vds: 100
Description: MOSFET N CH 650V 11A TO220
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 11A (Tc)
Rds On (Max) @ Id, Vgs: 340mOhm @ 5.5A, 10V
Power Dissipation (Max): 125W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-220
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 22 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 810 pF @ 100 V
Voltage Coupled to Gate Charge (Qg) (Max) @ Vgs: 10
Voltage Coupled to Input Capacitance (Ciss) (Max) @ Vds: 100
auf Bestellung 980 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl | Preis ohne MwSt |
---|---|
4+ | 5.49 EUR |
50+ | 2.59 EUR |
100+ | 2.31 EUR |
500+ | 2.03 EUR |
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Technische Details STP15N65M5 STMicroelectronics
Description: MOSFET N CH 650V 11A TO220, Packaging: Tube, Package / Case: TO-220-3, Mounting Type: Through Hole, Operating Temperature: 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 11A (Tc), Rds On (Max) @ Id, Vgs: 340mOhm @ 5.5A, 10V, Power Dissipation (Max): 125W (Tc), Vgs(th) (Max) @ Id: 5V @ 250µA, Supplier Device Package: TO-220, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±25V, Drain to Source Voltage (Vdss): 650 V, Gate Charge (Qg) (Max) @ Vgs: 22 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 810 pF @ 100 V, Voltage Coupled to Gate Charge (Qg) (Max) @ Vgs: 10, Voltage Coupled to Input Capacitance (Ciss) (Max) @ Vds: 100.
Weitere Produktangebote STP15N65M5
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Verfügbarkeit |
Preis ohne MwSt |
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STP15N65M5 | Hersteller : STMicroelectronics | Trans MOSFET N-CH 650V 11A 3-Pin(3+Tab) TO-220AB Tube |
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STP15N65M5 | Hersteller : STMicroelectronics | Trans MOSFET N-CH 650V 11A 3-Pin(3+Tab) TO-220AB Tube |
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STP15N65M5 | Hersteller : STMicroelectronics | Trans MOSFET N-CH 650V 11A 3-Pin(3+Tab) TO-220AB Tube |
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STP15N65M5 | Hersteller : STMicroelectronics |
Category: THT N channel transistors Description: Transistor: N-MOSFET; MDmesh™ M5; unipolar; 650V; 6.9A; Idm: 44A Type of transistor: N-MOSFET Technology: MDmesh™ M5 Polarisation: unipolar Drain-source voltage: 650V Drain current: 6.9A Pulsed drain current: 44A Power dissipation: 85W Case: TO220-3 Gate-source voltage: ±25V On-state resistance: 0.34Ω Mounting: THT Gate charge: 22nC Kind of package: tube Kind of channel: enhanced Anzahl je Verpackung: 1 Stücke |
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STP15N65M5 | Hersteller : STMicroelectronics | MOSFETs N-Ch 650V .0308 Ohm 11A MDmesh V MOS |
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STP15N65M5 | Hersteller : STMicroelectronics |
Category: THT N channel transistors Description: Transistor: N-MOSFET; MDmesh™ M5; unipolar; 650V; 6.9A; Idm: 44A Type of transistor: N-MOSFET Technology: MDmesh™ M5 Polarisation: unipolar Drain-source voltage: 650V Drain current: 6.9A Pulsed drain current: 44A Power dissipation: 85W Case: TO220-3 Gate-source voltage: ±25V On-state resistance: 0.34Ω Mounting: THT Gate charge: 22nC Kind of package: tube Kind of channel: enhanced |
Produkt ist nicht verfügbar |