STL9N60M2 STMicroelectronics
Hersteller: STMicroelectronics
Description: MOSFET N-CH 600V 4.8A PWRFLAT56
Packaging: Cut Tape (CT)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 4.8A (Tc)
Rds On (Max) @ Id, Vgs: 860mOhm @ 2.4A, 10V
Power Dissipation (Max): 48W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: PowerFlat™ (5x6) HV
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 10 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 320 pF @ 100 V
Description: MOSFET N-CH 600V 4.8A PWRFLAT56
Packaging: Cut Tape (CT)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 4.8A (Tc)
Rds On (Max) @ Id, Vgs: 860mOhm @ 2.4A, 10V
Power Dissipation (Max): 48W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: PowerFlat™ (5x6) HV
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 10 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 320 pF @ 100 V
auf Bestellung 1680 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl | Preis ohne MwSt |
---|---|
6+ | 3.17 EUR |
10+ | 2.15 EUR |
100+ | 1.53 EUR |
500+ | 1.25 EUR |
1000+ | 1.16 EUR |
Produktrezensionen
Produktbewertung abgeben
Technische Details STL9N60M2 STMicroelectronics
Description: MOSFET N-CH 600V 4.8A PWRFLAT56, Packaging: Tape & Reel (TR), Package / Case: 8-PowerVDFN, Mounting Type: Surface Mount, Operating Temperature: 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 4.8A (Tc), Rds On (Max) @ Id, Vgs: 860mOhm @ 2.4A, 10V, Power Dissipation (Max): 48W (Tc), Vgs(th) (Max) @ Id: 4V @ 250µA, Supplier Device Package: PowerFlat™ (5x6) HV, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±25V, Drain to Source Voltage (Vdss): 600 V, Gate Charge (Qg) (Max) @ Vgs: 10 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 320 pF @ 100 V.
Weitere Produktangebote STL9N60M2 nach Preis ab 1.16 EUR bis 3.68 EUR
Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
Preis ohne MwSt | ||||||||||||||
---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
STL9N60M2 | Hersteller : STMicroelectronics | MOSFETs N-channel 600 V, 0.76 Ohm typ 4.8 A MDmesh M2 Power MOSFET |
auf Bestellung 3000 Stücke: Lieferzeit 122-126 Tag (e) |
|
|||||||||||||||
STL9N60M2 | Hersteller : STMicroelectronics | Trans MOSFET N-CH 600V 4.8A 8-Pin Power Flat EP T/R |
Produkt ist nicht verfügbar |
||||||||||||||||
STL9N60M2 | Hersteller : STMicroelectronics | Trans MOSFET N-CH 600V 4.8A 8-Pin Power Flat EP T/R |
Produkt ist nicht verfügbar |
||||||||||||||||
STL9N60M2 | Hersteller : STMicroelectronics |
Description: MOSFET N-CH 600V 4.8A PWRFLAT56 Packaging: Tape & Reel (TR) Package / Case: 8-PowerVDFN Mounting Type: Surface Mount Operating Temperature: 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 4.8A (Tc) Rds On (Max) @ Id, Vgs: 860mOhm @ 2.4A, 10V Power Dissipation (Max): 48W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: PowerFlat™ (5x6) HV Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±25V Drain to Source Voltage (Vdss): 600 V Gate Charge (Qg) (Max) @ Vgs: 10 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 320 pF @ 100 V |
Produkt ist nicht verfügbar |