STL21N65M5 STMicroelectronics
Produkt ist nicht verfügbar
Produktrezensionen
Produktbewertung abgeben
Weitere Produktangebote STL21N65M5 nach Preis ab 4.19 EUR bis 4.98 EUR
Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
Preis ohne MwSt | ||||||||
---|---|---|---|---|---|---|---|---|---|---|---|---|---|
STL21N65M5 | Hersteller : STMicroelectronics | MOSFETs Mdmesh 650V .19 Ohms 1mm TO-220 17A (ID) |
auf Bestellung 2743 Stücke: Lieferzeit 10-14 Tag (e) |
|
|||||||||
STL21N65M5 | Hersteller : STMicroelectronics | Trans MOSFET N-CH Si 650V 17A 5-Pin Power Flat T/R |
Produkt ist nicht verfügbar |
||||||||||
STL21N65M5 | Hersteller : STMicroelectronics | Trans MOSFET N-CH Si 650V 17A 5-Pin Power Flat T/R |
Produkt ist nicht verfügbar |
||||||||||
STL21N65M5 | Hersteller : STMicroelectronics |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar Type of transistor: N-MOSFET Polarisation: unipolar Mounting: SMD Kind of package: tape Kind of channel: enhanced Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
||||||||||
STL21N65M5 | Hersteller : STMicroelectronics |
Description: MOSFET N-CH 650V 17A PWRFLAT HV Packaging: Tape & Reel (TR) Package / Case: 8-PowerVDFN Mounting Type: Surface Mount Operating Temperature: 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 17A (Tc) Rds On (Max) @ Id, Vgs: 179mOhm @ 8.5A, 10V Power Dissipation (Max): 3W (Ta), 125W (Tc) Vgs(th) (Max) @ Id: 5V @ 250µA Supplier Device Package: PowerFlat™ (8x8) HV Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±25V Drain to Source Voltage (Vdss): 650 V Gate Charge (Qg) (Max) @ Vgs: 50 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1950 pF @ 100 V |
Produkt ist nicht verfügbar |
||||||||||
STL21N65M5 | Hersteller : STMicroelectronics |
Description: MOSFET N-CH 650V 17A PWRFLAT HV Packaging: Cut Tape (CT) Package / Case: 8-PowerVDFN Mounting Type: Surface Mount Operating Temperature: 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 17A (Tc) Rds On (Max) @ Id, Vgs: 179mOhm @ 8.5A, 10V Power Dissipation (Max): 3W (Ta), 125W (Tc) Vgs(th) (Max) @ Id: 5V @ 250µA Supplier Device Package: PowerFlat™ (8x8) HV Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±25V Drain to Source Voltage (Vdss): 650 V Gate Charge (Qg) (Max) @ Vgs: 50 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1950 pF @ 100 V |
Produkt ist nicht verfügbar |
||||||||||
STL21N65M5 | Hersteller : STMicroelectronics |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar Type of transistor: N-MOSFET Polarisation: unipolar Mounting: SMD Kind of package: tape Kind of channel: enhanced |
Produkt ist nicht verfügbar |