
auf Bestellung 886 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl | Preis |
---|---|
2+ | 1.95 EUR |
10+ | 1.59 EUR |
100+ | 1.24 EUR |
500+ | 1.05 EUR |
1000+ | 0.85 EUR |
2000+ | 0.81 EUR |
5000+ | 0.80 EUR |
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Technische Details STI4N62K3 STMicroelectronics
Description: MOSFET N-CH 620V 3.8A I2PAK, Packaging: Tube, Package / Case: TO-262-3 Long Leads, I2PAK, TO-262AA, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 3.8A (Tc), Rds On (Max) @ Id, Vgs: 2Ohm @ 1.9A, 10V, Power Dissipation (Max): 70W (Tc), Vgs(th) (Max) @ Id: 4.5V @ 50µA, Supplier Device Package: I2PAK, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±30V, Drain to Source Voltage (Vdss): 620 V, Gate Charge (Qg) (Max) @ Vgs: 22 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 550 pF @ 50 V.
Weitere Produktangebote STI4N62K3 nach Preis ab 0.40 EUR bis 0.79 EUR
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STI4N62K3 | Hersteller : STMicroelectronics |
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auf Bestellung 202 Stücke: Lieferzeit 7-14 Tag (e) |
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STI4N62K3 | Hersteller : STMicroelectronics |
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Produkt ist nicht verfügbar |
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STI4N62K3 | Hersteller : STMicroelectronics |
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Produkt ist nicht verfügbar |
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STI4N62K3 | Hersteller : STMicroelectronics |
![]() Packaging: Tube Package / Case: TO-262-3 Long Leads, I2PAK, TO-262AA Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 3.8A (Tc) Rds On (Max) @ Id, Vgs: 2Ohm @ 1.9A, 10V Power Dissipation (Max): 70W (Tc) Vgs(th) (Max) @ Id: 4.5V @ 50µA Supplier Device Package: I2PAK Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 620 V Gate Charge (Qg) (Max) @ Vgs: 22 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 550 pF @ 50 V |
Produkt ist nicht verfügbar |