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STGWT80H65FB

STGWT80H65FB STMicroelectronics


stgw80h65fb-1850950.pdf Hersteller: STMicroelectronics
IGBT Transistors Trench gate field-stop IGBT, HB series 650 V, 80 A high speed
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Technische Details STGWT80H65FB STMicroelectronics

Description: IGBT 650V 120A 469W TO3P-3L, Packaging: Tube, Package / Case: TO-3P-3, SC-65-3, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 175°C (TJ), Input Type: Standard, Vce(on) (Max) @ Vge, Ic: 2V @ 15V, 80A, Supplier Device Package: TO-3P, IGBT Type: Trench Field Stop, Td (on/off) @ 25°C: 84ns/280ns, Switching Energy: 2.1mJ (on), 1.5mJ (off), Test Condition: 400V, 80A, 10Ohm, 15V, Gate Charge: 414 nC, Part Status: Obsolete, Current - Collector (Ic) (Max): 120 A, Voltage - Collector Emitter Breakdown (Max): 650 V, Current - Collector Pulsed (Icm): 240 A, Power - Max: 469 W.

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STGWT80H65FB Hersteller : STMicroelectronics en.DM00118301.pdf Category: THT IGBT transistors
Description: Transistor: IGBT; 650V; 80A; 469W; TO3P
Type of transistor: IGBT
Collector-emitter voltage: 650V
Collector current: 80A
Power dissipation: 469W
Case: TO3P
Gate-emitter voltage: ±20V
Pulsed collector current: 240A
Mounting: THT
Gate charge: 414nC
Kind of package: tube
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
STGWT80H65FB STGWT80H65FB Hersteller : STMicroelectronics en.DM00118301.pdf Description: IGBT 650V 120A 469W TO3P-3L
Packaging: Tube
Package / Case: TO-3P-3, SC-65-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 2V @ 15V, 80A
Supplier Device Package: TO-3P
IGBT Type: Trench Field Stop
Td (on/off) @ 25°C: 84ns/280ns
Switching Energy: 2.1mJ (on), 1.5mJ (off)
Test Condition: 400V, 80A, 10Ohm, 15V
Gate Charge: 414 nC
Part Status: Obsolete
Current - Collector (Ic) (Max): 120 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector Pulsed (Icm): 240 A
Power - Max: 469 W
Produkt ist nicht verfügbar
STGWT80H65FB Hersteller : STMicroelectronics en.DM00118301.pdf Category: THT IGBT transistors
Description: Transistor: IGBT; 650V; 80A; 469W; TO3P
Type of transistor: IGBT
Collector-emitter voltage: 650V
Collector current: 80A
Power dissipation: 469W
Case: TO3P
Gate-emitter voltage: ±20V
Pulsed collector current: 240A
Mounting: THT
Gate charge: 414nC
Kind of package: tube
Produkt ist nicht verfügbar