STGWA50M65DF2 STMicroelectronics
Hersteller: STMicroelectronicsDescription: TRENCH GATE FIELD-STOP IGBT M SE
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 162 ns
Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 50A
Supplier Device Package: TO-247 Long Leads
IGBT Type: Trench Field Stop
Td (on/off) @ 25°C: 42ns/130ns
Switching Energy: 880µJ (on), 1.57mJ (off)
Test Condition: 400V, 50A, 6.8Ohm, 15V
Gate Charge: 150 nC
Part Status: Active
Current - Collector (Ic) (Max): 80 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector Pulsed (Icm): 150 A
Power - Max: 375 W
auf Bestellung 400 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis ohne MwSt |
|---|---|
| 3+ | 7.57 EUR |
| 30+ | 6 EUR |
| 120+ | 5.15 EUR |
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Technische Details STGWA50M65DF2 STMicroelectronics
Description: TRENCH GATE FIELD-STOP IGBT M SE, Packaging: Tube, Package / Case: TO-247-3, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 175°C (TJ), Input Type: Standard, Reverse Recovery Time (trr): 162 ns, Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 50A, Supplier Device Package: TO-247 Long Leads, IGBT Type: Trench Field Stop, Td (on/off) @ 25°C: 42ns/130ns, Switching Energy: 880µJ (on), 1.57mJ (off), Test Condition: 400V, 50A, 6.8Ohm, 15V, Gate Charge: 150 nC, Part Status: Active, Current - Collector (Ic) (Max): 80 A, Voltage - Collector Emitter Breakdown (Max): 650 V, Current - Collector Pulsed (Icm): 150 A, Power - Max: 375 W.
Weitere Produktangebote STGWA50M65DF2 nach Preis ab 3.82 EUR bis 7.83 EUR
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