STGWA50HP65FB2 STMicroelectronics
Hersteller: STMicroelectronicsIGBT Transistors Trench gate field-stop, 650 V, 50 A, high-speed HB2 series IGBT
auf Bestellung 393 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis ohne MwSt |
|---|---|
| 1+ | 4.58 EUR |
| 10+ | 4.47 EUR |
| 25+ | 3.63 EUR |
| 100+ | 3.12 EUR |
| 250+ | 2.76 EUR |
| 600+ | 2.36 EUR |
| 1200+ | 2.22 EUR |
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Technische Details STGWA50HP65FB2 STMicroelectronics
Description: IGBT TRENCH FS 650V 86A TO247, Packaging: Tube, Package / Case: TO-247-3, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 175°C (TJ), Input Type: Standard, Reverse Recovery Time (trr): 140 ns, Vce(on) (Max) @ Vge, Ic: 2V @ 15V, 50A, Supplier Device Package: TO-247 Long Leads, IGBT Type: Trench Field Stop, Td (on/off) @ 25°C: -/115ns, Switching Energy: 580µJ (off), Test Condition: 400V, 50A, 4.7Ohm, 15V, Gate Charge: 151 nC, Part Status: Active, Current - Collector (Ic) (Max): 86 A, Voltage - Collector Emitter Breakdown (Max): 650 V, Current - Collector Pulsed (Icm): 150 A, Power - Max: 272 W.
Weitere Produktangebote STGWA50HP65FB2 nach Preis ab 2.09 EUR bis 5.02 EUR
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STGWA50HP65FB2 | Hersteller : STMicroelectronics |
Description: IGBT TRENCH FS 650V 86A TO247 Packaging: Tube Package / Case: TO-247-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 175°C (TJ) Input Type: Standard Reverse Recovery Time (trr): 140 ns Vce(on) (Max) @ Vge, Ic: 2V @ 15V, 50A Supplier Device Package: TO-247 Long Leads IGBT Type: Trench Field Stop Td (on/off) @ 25°C: -/115ns Switching Energy: 580µJ (off) Test Condition: 400V, 50A, 4.7Ohm, 15V Gate Charge: 151 nC Part Status: Active Current - Collector (Ic) (Max): 86 A Voltage - Collector Emitter Breakdown (Max): 650 V Current - Collector Pulsed (Icm): 150 A Power - Max: 272 W |
auf Bestellung 536 Stücke: Lieferzeit 10-14 Tag (e) |
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STGWA50HP65FB2 | Hersteller : STMICROELECTRONICS |
Description: STMICROELECTRONICS - STGWA50HP65FB2 - IGBT, 86 A, 1.55 V, 272 W, 650 V, TO-247LL, 3 Pin(s) tariffCode: 85412900 Transistormontage: Durchsteckmontage rohsCompliant: YES hazardous: false rohsPhthalatesCompliant: YES Kollektor-Emitter-Sättigungsspannung: 1.55V usEccn: EAR99 euEccn: NLR Verlustleistung: 272W Bauform - Transistor: TO-247LL Anzahl der Pins: 3Pin(s) Produktpalette: HB2 Kollektor-Emitter-Spannung, max.: 650V productTraceability: Yes-Date/Lot Code Betriebstemperatur, max.: 175°C Kontinuierlicher Kollektorstrom: 86A SVHC: No SVHC (23-Jan-2024) |
auf Bestellung 20 Stücke: Lieferzeit 14-21 Tag (e) |
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STGWA50HP65FB2 | Hersteller : STMicroelectronics |
Trans IGBT Chip N-CH 650V 86A 272000mW 3-Pin(3+Tab) TO-247 Tube |
Produkt ist nicht verfügbar |
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| STGWA50HP65FB2 | Hersteller : STMicroelectronics |
Category: THT IGBT transistors Description: Transistor: IGBT; 650V; 53A; 272W; TO247-3 Type of transistor: IGBT Collector-emitter voltage: 650V Collector current: 53A Power dissipation: 272W Case: TO247-3 Gate-emitter voltage: ±20V Pulsed collector current: 150A Mounting: THT Gate charge: 151nC Kind of package: tube Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
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| STGWA50HP65FB2 | Hersteller : STMicroelectronics |
Category: THT IGBT transistors Description: Transistor: IGBT; 650V; 53A; 272W; TO247-3 Type of transistor: IGBT Collector-emitter voltage: 650V Collector current: 53A Power dissipation: 272W Case: TO247-3 Gate-emitter voltage: ±20V Pulsed collector current: 150A Mounting: THT Gate charge: 151nC Kind of package: tube |
Produkt ist nicht verfügbar |