STGWA25H120F2 STMicroelectronics
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Technische Details STGWA25H120F2 STMicroelectronics
Description: IGBT HB 1200V 25A HS TO247-3, Packaging: Tube, Package / Case: TO-247-3, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 175°C (TJ), Input Type: Standard, Vce(on) (Max) @ Vge, Ic: 2.6V @ 15V, 25A, Supplier Device Package: TO-247-3, IGBT Type: Trench Field Stop, Td (on/off) @ 25°C: 29ns/130ns, Switching Energy: 600µJ (on), 700µJ (off), Test Condition: 600V, 25A, 10Ohm, 15V, Gate Charge: 100 nC, Current - Collector (Ic) (Max): 50 A, Voltage - Collector Emitter Breakdown (Max): 1200 V, Current - Collector Pulsed (Icm): 100 A, Power - Max: 375 W.
Weitere Produktangebote STGWA25H120F2
| Foto | Bezeichnung | Hersteller | Beschreibung |
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| STGWA25H120F2 | Hersteller : STMicroelectronics |
 STGWA25H120F2 THT IGBT transistors |
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STGWA25H120F2 | Hersteller : STMicroelectronics |
Description: IGBT HB 1200V 25A HS TO247-3 Packaging: Tube Package / Case: TO-247-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 175°C (TJ) Input Type: Standard Vce(on) (Max) @ Vge, Ic: 2.6V @ 15V, 25A Supplier Device Package: TO-247-3 IGBT Type: Trench Field Stop Td (on/off) @ 25°C: 29ns/130ns Switching Energy: 600µJ (on), 700µJ (off) Test Condition: 600V, 25A, 10Ohm, 15V Gate Charge: 100 nC Current - Collector (Ic) (Max): 50 A Voltage - Collector Emitter Breakdown (Max): 1200 V Current - Collector Pulsed (Icm): 100 A Power - Max: 375 W |
Produkt ist nicht verfügbar |
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| STGWA25H120F2 | Hersteller : STMicroelectronics |
IGBT Transistors Trench gate field-stop IGBT, H series 1200 V, 25 A high speed |
Produkt ist nicht verfügbar |