STGWA20M65DF2 STMicroelectronics
Hersteller: STMicroelectronicsIGBT Transistors Trench gate field-stop IGBT M series, 650 V 20 A low loss
auf Bestellung 28 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis ohne MwSt |
|---|---|
| 1+ | 5.61 EUR |
| 100+ | 4.59 EUR |
| 600+ | 3.45 EUR |
| 1200+ | 3.26 EUR |
| 3000+ | 3.15 EUR |
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Technische Details STGWA20M65DF2 STMicroelectronics
Description: IGBT TRENCH 650V 40A TO247, Packaging: Tube, Package / Case: TO-247-3, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 175°C (TJ), Input Type: Standard, Reverse Recovery Time (trr): 166 ns, Vce(on) (Max) @ Vge, Ic: 2V @ 15V, 20A, Supplier Device Package: TO-247 Long Leads, IGBT Type: Trench Field Stop, Td (on/off) @ 25°C: 26ns/108ns, Switching Energy: 140µJ (on), 560µJ (off), Test Condition: 400V, 20A, 12Ohm, 15V, Gate Charge: 63 nC, Current - Collector (Ic) (Max): 40 A, Voltage - Collector Emitter Breakdown (Max): 650 V, Current - Collector Pulsed (Icm): 80 A, Power - Max: 166 W.
Weitere Produktangebote STGWA20M65DF2
| Foto | Bezeichnung | Hersteller | Beschreibung |
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| STGWA20M65DF2 | Hersteller : STMicroelectronics |
Trans IGBT Chip N-CH 650V 40A 166W 3-Pin(3+Tab) TO-247 Tube |
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| STGWA20M65DF2 | Hersteller : STMicroelectronics |
Category: THT IGBT transistors Description: Transistor: IGBT; 650V; 20A; 166W; TO247-3 Type of transistor: IGBT Collector-emitter voltage: 650V Collector current: 20A Power dissipation: 166W Case: TO247-3 Gate-emitter voltage: ±20V Pulsed collector current: 80A Mounting: THT Gate charge: 63nC Kind of package: tube Features of semiconductor devices: integrated anti-parallel diode Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
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STGWA20M65DF2 | Hersteller : STMicroelectronics |
Description: IGBT TRENCH 650V 40A TO247 Packaging: Tube Package / Case: TO-247-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 175°C (TJ) Input Type: Standard Reverse Recovery Time (trr): 166 ns Vce(on) (Max) @ Vge, Ic: 2V @ 15V, 20A Supplier Device Package: TO-247 Long Leads IGBT Type: Trench Field Stop Td (on/off) @ 25°C: 26ns/108ns Switching Energy: 140µJ (on), 560µJ (off) Test Condition: 400V, 20A, 12Ohm, 15V Gate Charge: 63 nC Current - Collector (Ic) (Max): 40 A Voltage - Collector Emitter Breakdown (Max): 650 V Current - Collector Pulsed (Icm): 80 A Power - Max: 166 W |
Produkt ist nicht verfügbar |
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| STGWA20M65DF2 | Hersteller : STMicroelectronics |
Category: THT IGBT transistors Description: Transistor: IGBT; 650V; 20A; 166W; TO247-3 Type of transistor: IGBT Collector-emitter voltage: 650V Collector current: 20A Power dissipation: 166W Case: TO247-3 Gate-emitter voltage: ±20V Pulsed collector current: 80A Mounting: THT Gate charge: 63nC Kind of package: tube Features of semiconductor devices: integrated anti-parallel diode |
Produkt ist nicht verfügbar |