STGSB200M65DF2AG STMicroelectronics
Hersteller: STMicroelectronics
IGBT Transistors Automotive-grade trench gate field-stop, 650 V, 200 A low-loss M series IGBT
IGBT Transistors Automotive-grade trench gate field-stop, 650 V, 200 A low-loss M series IGBT
auf Bestellung 87 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl | Preis ohne MwSt |
---|---|
1+ | 37.66 EUR |
10+ | 33.48 EUR |
25+ | 31.42 EUR |
200+ | 27.3 EUR |
400+ | 25.1 EUR |
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Technische Details STGSB200M65DF2AG STMicroelectronics
Description: DISCRETE, Packaging: Bulk, Package / Case: 9-PowerSMD, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 175°C (TJ), Input Type: Standard, Reverse Recovery Time (trr): 174.5 ns, Vce(on) (Max) @ Vge, Ic: 2.05V @ 15V, 200A, Supplier Device Package: 9-ACEPACK SMIT, IGBT Type: Trench Field Stop, Td (on/off) @ 25°C: 122ns/250ns, Switching Energy: 3.82mJ (on), 6.97mJ (off), Test Condition: 400V, 200A, 4.7Ohm, 15V, Gate Charge: 554 nC, Part Status: Active, Current - Collector (Ic) (Max): 216 A, Voltage - Collector Emitter Breakdown (Max): 650 V, Current - Collector Pulsed (Icm): 700 A, Power - Max: 714 W, Grade: Automotive, Qualification: AEC-Q101.
Weitere Produktangebote STGSB200M65DF2AG nach Preis ab 33.21 EUR bis 37.38 EUR
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STGSB200M65DF2AG | Hersteller : STMicroelectronics |
Description: DISCRETE Packaging: Bulk Package / Case: 9-PowerSMD Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Input Type: Standard Reverse Recovery Time (trr): 174.5 ns Vce(on) (Max) @ Vge, Ic: 2.05V @ 15V, 200A Supplier Device Package: 9-ACEPACK SMIT IGBT Type: Trench Field Stop Td (on/off) @ 25°C: 122ns/250ns Switching Energy: 3.82mJ (on), 6.97mJ (off) Test Condition: 400V, 200A, 4.7Ohm, 15V Gate Charge: 554 nC Part Status: Active Current - Collector (Ic) (Max): 216 A Voltage - Collector Emitter Breakdown (Max): 650 V Current - Collector Pulsed (Icm): 700 A Power - Max: 714 W Grade: Automotive Qualification: AEC-Q101 |
auf Bestellung 150 Stücke: Lieferzeit 10-14 Tag (e) |
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STGSB200M65DF2AG | Hersteller : STMicroelectronics | Trans IGBT Chip N-CH 650V 216A 714000mW Automotive 9-Pin SMIT T/R |
auf Bestellung 10 Stücke: Lieferzeit 14-21 Tag (e) |
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STGSB200M65DF2AG | Hersteller : STMicroelectronics | Trans IGBT Chip N-CH 650V 216A 714W Automotive AEC-Q101 9-Pin SMIT T/R |
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