STFW45N65M5 STMicroelectronics
Hersteller: STMicroelectronics
MOSFET N-channel 650 V, 0.067 Ohm typ 35 A, MDmesh M5 Power MOSFET in TO-3PF package
MOSFET N-channel 650 V, 0.067 Ohm typ 35 A, MDmesh M5 Power MOSFET in TO-3PF package
auf Bestellung 299 Stücke:
Lieferzeit 374-378 Tag (e)
Anzahl | Preis ohne MwSt |
---|---|
1+ | 13.46 EUR |
10+ | 12.55 EUR |
100+ | 11.09 EUR |
300+ | 10.77 EUR |
Produktrezensionen
Produktbewertung abgeben
Technische Details STFW45N65M5 STMicroelectronics
Description: MOSFET N-CH 650V 35A ISOWATT, Packaging: Tube, Package / Case: TO-3P-3 Full Pack, Mounting Type: Through Hole, Operating Temperature: 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 35A (Tc), Rds On (Max) @ Id, Vgs: 78mOhm @ 17.5A, 10V, Power Dissipation (Max): 57W (Tc), Vgs(th) (Max) @ Id: 5V @ 250µA, Supplier Device Package: TO-3PF, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±25V, Drain to Source Voltage (Vdss): 650 V, Gate Charge (Qg) (Max) @ Vgs: 82 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 3470 pF @ 100 V.
Weitere Produktangebote STFW45N65M5
Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
Preis ohne MwSt |
---|---|---|---|---|---|
STFW45N65M5 | Hersteller : STMicroelectronics | Trans MOSFET N-CH 650V 35A 3-Pin(3+Tab) TO-3PF Tube |
Produkt ist nicht verfügbar |
||
STFW45N65M5 | Hersteller : STMicroelectronics | Trans MOSFET N-CH 650V 35A 3-Pin(3+Tab) TO-3PF Tube |
Produkt ist nicht verfügbar |
||
STFW45N65M5 | Hersteller : STMicroelectronics |
Description: MOSFET N-CH 650V 35A ISOWATT Packaging: Tube Package / Case: TO-3P-3 Full Pack Mounting Type: Through Hole Operating Temperature: 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 35A (Tc) Rds On (Max) @ Id, Vgs: 78mOhm @ 17.5A, 10V Power Dissipation (Max): 57W (Tc) Vgs(th) (Max) @ Id: 5V @ 250µA Supplier Device Package: TO-3PF Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±25V Drain to Source Voltage (Vdss): 650 V Gate Charge (Qg) (Max) @ Vgs: 82 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 3470 pF @ 100 V |
Produkt ist nicht verfügbar |