STD7N52DK3 STMicroelectronics
Hersteller: STMicroelectronics
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 525V; 4A; 90W; DPAK
Type of transistor: N-MOSFET
Technology: SuperMesh™
Polarisation: unipolar
Drain-source voltage: 525V
Drain current: 4A
Power dissipation: 90W
Case: DPAK
Gate-source voltage: ±30V
On-state resistance: 1.15Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhanced
Features of semiconductor devices: ESD protected gate
Anzahl je Verpackung: 1 Stücke
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 525V; 4A; 90W; DPAK
Type of transistor: N-MOSFET
Technology: SuperMesh™
Polarisation: unipolar
Drain-source voltage: 525V
Drain current: 4A
Power dissipation: 90W
Case: DPAK
Gate-source voltage: ±30V
On-state resistance: 1.15Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhanced
Features of semiconductor devices: ESD protected gate
Anzahl je Verpackung: 1 Stücke
auf Bestellung 100 Stücke:
Lieferzeit 7-14 Tag (e)
Anzahl | Preis ohne MwSt |
---|---|
100+ | 0.72 EUR |
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Technische Details STD7N52DK3 STMicroelectronics
Description: MOSFET N-CH 525V 6A DPAK, Packaging: Tape & Reel (TR), Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63, Mounting Type: Surface Mount, Operating Temperature: 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 6A (Tc), Rds On (Max) @ Id, Vgs: 1.15Ohm @ 3A, 10V, Power Dissipation (Max): 90W (Tc), Vgs(th) (Max) @ Id: 4.5V @ 50µA, Supplier Device Package: DPAK, Part Status: Obsolete, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±30V, Drain to Source Voltage (Vdss): 525 V, Gate Charge (Qg) (Max) @ Vgs: 33 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 870 pF @ 50 V.
Weitere Produktangebote STD7N52DK3 nach Preis ab 0.72 EUR bis 0.72 EUR
Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
Preis ohne MwSt | ||||
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STD7N52DK3 | Hersteller : STMicroelectronics |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 525V; 4A; 90W; DPAK Type of transistor: N-MOSFET Technology: SuperMesh™ Polarisation: unipolar Drain-source voltage: 525V Drain current: 4A Power dissipation: 90W Case: DPAK Gate-source voltage: ±30V On-state resistance: 1.15Ω Mounting: SMD Kind of package: reel; tape Kind of channel: enhanced Features of semiconductor devices: ESD protected gate |
auf Bestellung 100 Stücke: Lieferzeit 14-21 Tag (e) |
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STD7N52DK3 | Hersteller : STMicroelectronics | Trans MOSFET N-CH 525V 6A 3-Pin(2+Tab) DPAK T/R |
Produkt ist nicht verfügbar |
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STD7N52DK3 | Hersteller : STMicroelectronics | Trans MOSFET N-CH 525V 6A 3-Pin(2+Tab) DPAK T/R |
Produkt ist nicht verfügbar |
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STD7N52DK3 | Hersteller : STMicroelectronics |
Description: MOSFET N-CH 525V 6A DPAK Packaging: Tape & Reel (TR) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Operating Temperature: 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 6A (Tc) Rds On (Max) @ Id, Vgs: 1.15Ohm @ 3A, 10V Power Dissipation (Max): 90W (Tc) Vgs(th) (Max) @ Id: 4.5V @ 50µA Supplier Device Package: DPAK Part Status: Obsolete Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 525 V Gate Charge (Qg) (Max) @ Vgs: 33 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 870 pF @ 50 V |
Produkt ist nicht verfügbar |
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STD7N52DK3 | Hersteller : STMicroelectronics | MOSFET N-Ch 620V 0.98 ohm 6.2A SuperFREDmesh3 |
Produkt ist nicht verfügbar |