STD5N52K3 STMicroelectronics
Hersteller: STMicroelectronicsCategory: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 525V; 2.77A; 70W; DPAK
Type of transistor: N-MOSFET
Technology: SuperMesh™
Polarisation: unipolar
Drain-source voltage: 525V
Drain current: 2.77A
Power dissipation: 70W
Case: DPAK
Gate-source voltage: ±30V
On-state resistance: 1.5Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhanced
Features of semiconductor devices: ESD protected gate
Anzahl je Verpackung: 1 Stücke
auf Bestellung 1880 Stücke:
Lieferzeit 7-14 Tag (e)
| Anzahl | Preis ohne MwSt |
|---|---|
| 105+ | 0.68 EUR |
| 117+ | 0.62 EUR |
| 148+ | 0.48 EUR |
| 157+ | 0.46 EUR |
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Technische Details STD5N52K3 STMicroelectronics
Description: MOSFET N-CH 525V 4.4A DPAK, Packaging: Tape & Reel (TR), Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 4.4A (Tc), Rds On (Max) @ Id, Vgs: 1.5Ohm @ 2.2A, 10V, Power Dissipation (Max): 70W (Tc), Vgs(th) (Max) @ Id: 4.5V @ 50µA, Supplier Device Package: DPAK, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±30V, Drain to Source Voltage (Vdss): 525 V, Gate Charge (Qg) (Max) @ Vgs: 17 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 545 pF @ 100 V.
Weitere Produktangebote STD5N52K3 nach Preis ab 0.46 EUR bis 2.11 EUR
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STD5N52K3 | Hersteller : STMicroelectronics |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 525V; 2.77A; 70W; DPAK Type of transistor: N-MOSFET Technology: SuperMesh™ Polarisation: unipolar Drain-source voltage: 525V Drain current: 2.77A Power dissipation: 70W Case: DPAK Gate-source voltage: ±30V On-state resistance: 1.5Ω Mounting: SMD Kind of package: reel; tape Kind of channel: enhanced Features of semiconductor devices: ESD protected gate |
auf Bestellung 1880 Stücke: Lieferzeit 14-21 Tag (e) |
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STD5N52K3 | Hersteller : STMicroelectronics |
MOSFETs N-CH 525 V 4.4 A SuperMESH3 |
auf Bestellung 2049 Stücke: Lieferzeit 10-14 Tag (e) |
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STD5N52K3 | Hersteller : STMicroelectronics |
Trans MOSFET N-CH 525V 4.4A 3-Pin(2+Tab) DPAK T/R |
auf Bestellung 5000 Stücke: Lieferzeit 14-21 Tag (e) |
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| STD5N52K3 | Hersteller : ST |
Transistor N-Channel MOSFET; 525V; 30V; 1,5Ohm; 4,4A; 70W; -55°C ~ 150°C; STD5N52K3 TSTD5N52K3 Anzahl je Verpackung: 10 Stücke |
auf Bestellung 100 Stücke: Lieferzeit 7-14 Tag (e) |
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STD5N52K3 Produktcode: 132106 |
Transistoren > MOSFET N-CH |
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STD5N52K3 | Hersteller : STMicroelectronics |
Trans MOSFET N-CH 525V 4.4A 3-Pin(2+Tab) DPAK T/R |
Produkt ist nicht verfügbar |
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| STD5N52K3 | Hersteller : STMicroelectronics |
Trans MOSFET N-CH 525V 4.4A 3-Pin(2+Tab) DPAK T/R |
Produkt ist nicht verfügbar |
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STD5N52K3 | Hersteller : STMicroelectronics |
Description: MOSFET N-CH 525V 4.4A DPAK Packaging: Tape & Reel (TR) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 4.4A (Tc) Rds On (Max) @ Id, Vgs: 1.5Ohm @ 2.2A, 10V Power Dissipation (Max): 70W (Tc) Vgs(th) (Max) @ Id: 4.5V @ 50µA Supplier Device Package: DPAK Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 525 V Gate Charge (Qg) (Max) @ Vgs: 17 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 545 pF @ 100 V |
Produkt ist nicht verfügbar |
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STD5N52K3 | Hersteller : STMicroelectronics |
Description: MOSFET N-CH 525V 4.4A DPAK Packaging: Cut Tape (CT) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 4.4A (Tc) Rds On (Max) @ Id, Vgs: 1.5Ohm @ 2.2A, 10V Power Dissipation (Max): 70W (Tc) Vgs(th) (Max) @ Id: 4.5V @ 50µA Supplier Device Package: DPAK Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 525 V Gate Charge (Qg) (Max) @ Vgs: 17 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 545 pF @ 100 V |
Produkt ist nicht verfügbar |