STD4NK60Z-1 STMicroelectronics
auf Bestellung 2940 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis ohne MwSt |
|---|---|
| 4+ | 0.8 EUR |
| 10+ | 0.71 EUR |
| 100+ | 0.69 EUR |
| 500+ | 0.65 EUR |
| 3000+ | 0.5 EUR |
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Technische Details STD4NK60Z-1 STMicroelectronics
Description: MOSFET N-CH 600V 4A IPAK, Packaging: Tube, Package / Case: TO-251-3 Short Leads, IPak, TO-251AA, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 4A (Tc), Rds On (Max) @ Id, Vgs: 2Ohm @ 2A, 10V, Power Dissipation (Max): 70W (Tc), Vgs(th) (Max) @ Id: 4.5V @ 50µA, Supplier Device Package: IPAK, Part Status: Not For New Designs, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±30V, Drain to Source Voltage (Vdss): 600 V, Gate Charge (Qg) (Max) @ Vgs: 26 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 510 pF @ 25 V.
Weitere Produktangebote STD4NK60Z-1 nach Preis ab 0.61 EUR bis 1.67 EUR
| Foto | Bezeichnung | Hersteller | Beschreibung |
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STD4NK60Z-1 | Hersteller : STMicroelectronics |
 Trans MOSFET N-CH 600V 4A 3-Pin(3+Tab) IPAK Tube |
auf Bestellung 3000 Stücke: Lieferzeit 14-21 Tag (e) |
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STD4NK60Z-1 | Hersteller : STMicroelectronics |
Trans MOSFET N-CH 600V 4A 3-Pin(3+Tab) IPAK Tube |
auf Bestellung 3000 Stücke: Lieferzeit 14-21 Tag (e) |
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STD4NK60Z-1 | Hersteller : STMicroelectronics |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 600V; 2.5A; Idm: 16A; 70W; IPAK Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 600V Drain current: 2.5A Pulsed drain current: 16A Power dissipation: 70W Case: IPAK On-state resistance: 2Ω Mounting: THT Gate charge: 26nC Kind of package: tube Kind of channel: enhanced Anzahl je Verpackung: 1 Stücke |
auf Bestellung 54 Stücke: Lieferzeit 7-14 Tag (e) |
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STD4NK60Z-1 | Hersteller : STMicroelectronics |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 600V; 2.5A; Idm: 16A; 70W; IPAK Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 600V Drain current: 2.5A Pulsed drain current: 16A Power dissipation: 70W Case: IPAK On-state resistance: 2Ω Mounting: THT Gate charge: 26nC Kind of package: tube Kind of channel: enhanced |
auf Bestellung 54 Stücke: Lieferzeit 14-21 Tag (e) |
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STD4NK60Z-1 | Hersteller : STMicroelectronics |
Description: MOSFET N-CH 600V 4A IPAK Packaging: Tube Package / Case: TO-251-3 Short Leads, IPak, TO-251AA Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 4A (Tc) Rds On (Max) @ Id, Vgs: 2Ohm @ 2A, 10V Power Dissipation (Max): 70W (Tc) Vgs(th) (Max) @ Id: 4.5V @ 50µA Supplier Device Package: IPAK Part Status: Not For New Designs Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 600 V Gate Charge (Qg) (Max) @ Vgs: 26 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 510 pF @ 25 V |
auf Bestellung 28 Stücke: Lieferzeit 10-14 Tag (e) |
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STD4NK60Z-1 | Hersteller : STMicroelectronics |
Trans MOSFET N-CH 600V 4A 3-Pin(3+Tab) IPAK Tube |
Produkt ist nicht verfügbar |
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STD4NK60Z-1 | Hersteller : STMicroelectronics |
Trans MOSFET N-CH 600V 4A 3-Pin(3+Tab) IPAK Tube |
Produkt ist nicht verfügbar |
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STD4NK60Z-1 | Hersteller : STMicroelectronics |
Trans MOSFET N-CH 600V 4A 3-Pin(3+Tab) IPAK Tube |
Produkt ist nicht verfügbar |
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| STD4NK60Z-1 | Hersteller : STMicroelectronics |
Trans MOSFET N-CH 600V 4A 3-Pin(3+Tab) IPAK Tube |
Produkt ist nicht verfügbar |