STD3N62K3 STMicroelectronics
auf Bestellung 2471 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Preis ohne MwSt |
|---|---|
| 248+ | 0.62 EUR |
| 249+ | 0.59 EUR |
| 251+ | 0.57 EUR |
| 253+ | 0.54 EUR |
| 255+ | 0.52 EUR |
| 500+ | 0.49 EUR |
| 1000+ | 0.47 EUR |
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Produktbewertung abgeben
Technische Details STD3N62K3 STMicroelectronics
Description: MOSFET N-CH 620V 2.7A DPAK, Packaging: Tape & Reel (TR), Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63, Mounting Type: Surface Mount, Operating Temperature: 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 2.7A (Tc), Rds On (Max) @ Id, Vgs: 2.5Ohm @ 1.4A, 10V, Power Dissipation (Max): 45W (Tc), Vgs(th) (Max) @ Id: 4.5V @ 50µA, Supplier Device Package: DPAK, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±30V, Drain to Source Voltage (Vdss): 620 V, Gate Charge (Qg) (Max) @ Vgs: 13 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 385 pF @ 25 V.
Weitere Produktangebote STD3N62K3 nach Preis ab 0.38 EUR bis 2.52 EUR
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STD3N62K3 | Hersteller : STMicroelectronics |
 Trans MOSFET N-CH 620V 2.7A 3-Pin(2+Tab) DPAK T/R |
auf Bestellung 2471 Stücke: Lieferzeit 14-21 Tag (e) |
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STD3N62K3 | Hersteller : STMicroelectronics |
MOSFETs N-channel 620V, 2.7A SuperMESH Mosfet |
auf Bestellung 11728 Stücke: Lieferzeit 10-14 Tag (e) |
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STD3N62K3 | Hersteller : STMicroelectronics |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 620V; 2.7A; 45W; DPAK Type of transistor: N-MOSFET Technology: SuperMesh™ Polarisation: unipolar Drain-source voltage: 620V Drain current: 2.7A Power dissipation: 45W Case: DPAK Gate-source voltage: ±30V On-state resistance: 2.5Ω Mounting: SMD Kind of package: reel; tape Kind of channel: enhanced Features of semiconductor devices: ESD protected gate Anzahl je Verpackung: 1 Stücke |
auf Bestellung 2485 Stücke: Lieferzeit 7-14 Tag (e) |
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STD3N62K3 | Hersteller : STMicroelectronics |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 620V; 2.7A; 45W; DPAK Type of transistor: N-MOSFET Technology: SuperMesh™ Polarisation: unipolar Drain-source voltage: 620V Drain current: 2.7A Power dissipation: 45W Case: DPAK Gate-source voltage: ±30V On-state resistance: 2.5Ω Mounting: SMD Kind of package: reel; tape Kind of channel: enhanced Features of semiconductor devices: ESD protected gate |
auf Bestellung 2485 Stücke: Lieferzeit 14-21 Tag (e) |
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STD3N62K3 | Hersteller : STMicroelectronics |
Description: MOSFET N-CH 620V 2.7A DPAK Packaging: Cut Tape (CT) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Operating Temperature: 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 2.7A (Tc) Rds On (Max) @ Id, Vgs: 2.5Ohm @ 1.4A, 10V Power Dissipation (Max): 45W (Tc) Vgs(th) (Max) @ Id: 4.5V @ 50µA Supplier Device Package: DPAK Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 620 V Gate Charge (Qg) (Max) @ Vgs: 13 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 385 pF @ 25 V |
auf Bestellung 563 Stücke: Lieferzeit 10-14 Tag (e) |
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STD3N62K3 | Hersteller : STMicroelectronics |
Trans MOSFET N-CH 620V 2.7A 3-Pin(2+Tab) DPAK T/R |
Produkt ist nicht verfügbar |
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| STD3N62K3 | Hersteller : STMicroelectronics |
Trans MOSFET N-CH 620V 2.7A 3-Pin(2+Tab) DPAK T/R |
Produkt ist nicht verfügbar |
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STD3N62K3 | Hersteller : STMicroelectronics |
Trans MOSFET N-CH 620V 2.7A 3-Pin(2+Tab) DPAK T/R |
Produkt ist nicht verfügbar |
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STD3N62K3 | Hersteller : STMicroelectronics |
Trans MOSFET N-CH 620V 2.7A 3-Pin(2+Tab) DPAK T/R |
Produkt ist nicht verfügbar |
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STD3N62K3 | Hersteller : STMicroelectronics |
Description: MOSFET N-CH 620V 2.7A DPAK Packaging: Tape & Reel (TR) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Operating Temperature: 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 2.7A (Tc) Rds On (Max) @ Id, Vgs: 2.5Ohm @ 1.4A, 10V Power Dissipation (Max): 45W (Tc) Vgs(th) (Max) @ Id: 4.5V @ 50µA Supplier Device Package: DPAK Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 620 V Gate Charge (Qg) (Max) @ Vgs: 13 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 385 pF @ 25 V |
Produkt ist nicht verfügbar |