STD11NM65N STMicroelectronics
Hersteller: STMicroelectronicsDescription: MOSFET N CH 650V 11A DPAK
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 11A (Tc)
Rds On (Max) @ Id, Vgs: 455mOhm @ 5.5A, 10V
Power Dissipation (Max): 110W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: DPAK
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 29 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 800 pF @ 50 V
auf Bestellung 2500 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis ohne MwSt |
|---|---|
| 2500+ | 2.54 EUR |
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Technische Details STD11NM65N STMicroelectronics
Description: MOSFET N CH 650V 11A DPAK, Packaging: Tape & Reel (TR), Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63, Mounting Type: Surface Mount, Operating Temperature: 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 11A (Tc), Rds On (Max) @ Id, Vgs: 455mOhm @ 5.5A, 10V, Power Dissipation (Max): 110W (Tc), Vgs(th) (Max) @ Id: 4V @ 250µA, Supplier Device Package: DPAK, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±25V, Drain to Source Voltage (Vdss): 650 V, Gate Charge (Qg) (Max) @ Vgs: 29 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 800 pF @ 50 V.
Weitere Produktangebote STD11NM65N nach Preis ab 1.99 EUR bis 5.21 EUR
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STD11NM65N | Hersteller : STMicroelectronics |
STD11NM65N STMicroelectronics Transistors MOSFETs N-CH 650V 11A 3-Pin(2+Tab) DPAK T/R - Arrow.com |
auf Bestellung 840 Stücke: Lieferzeit 14-21 Tag (e) |
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STD11NM65N | Hersteller : STMicroelectronics |
STD11NM65N STMicroelectronics Transistors MOSFETs N-CH 650V 11A 3-Pin(2+Tab) DPAK T/R - Arrow.com |
auf Bestellung 840 Stücke: Lieferzeit 14-21 Tag (e) |
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STD11NM65N | Hersteller : STMicroelectronics |
MOSFET N-Ch 650V 0.425Ohm 11A pwr MDMesh II |
auf Bestellung 4994 Stücke: Lieferzeit 10-14 Tag (e) |
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STD11NM65N | Hersteller : STMicroelectronics |
Description: MOSFET N CH 650V 11A DPAK Packaging: Cut Tape (CT) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Operating Temperature: 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 11A (Tc) Rds On (Max) @ Id, Vgs: 455mOhm @ 5.5A, 10V Power Dissipation (Max): 110W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: DPAK Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±25V Drain to Source Voltage (Vdss): 650 V Gate Charge (Qg) (Max) @ Vgs: 29 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 800 pF @ 50 V |
auf Bestellung 4162 Stücke: Lieferzeit 10-14 Tag (e) |
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STD11NM65N | Hersteller : STMicroelectronics |
Trans MOSFET N-CH 650V 11A 3-Pin(2+Tab) DPAK T/R |
Produkt ist nicht verfügbar |
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| STD11NM65N | Hersteller : STMicroelectronics |
Trans MOSFET N-CH 650V 11A 3-Pin(2+Tab) DPAK T/R |
Produkt ist nicht verfügbar |
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STD11NM65N | Hersteller : STMicroelectronics |
STD11NM65N STMicroelectronics Transistors MOSFETs N-CH 650V 11A 3-Pin(2+Tab) DPAK T/R - Arrow.com |
Produkt ist nicht verfügbar |