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STB28N60M2

STB28N60M2 STMicroelectronics

en.DM00095328.pdf Hersteller: STMicroelectronics
Description: MOSFET N-CH 600V 22A D2PAK
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 22A (Tc)
Rds On (Max) @ Id, Vgs: 150mOhm @ 11A, 10V
Power Dissipation (Max): 170W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-263 (D2Pak)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 36 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1440 pF @ 100 V
auf Bestellung 917 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
5+4.36 EUR
10+ 3.67 EUR
100+ 2.97 EUR
500+ 2.64 EUR
Mindestbestellmenge: 5
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Technische Details STB28N60M2 STMicroelectronics

Description: MOSFET N-CH 600V 22A D2PAK, Packaging: Tape & Reel (TR), Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 22A (Tc), Rds On (Max) @ Id, Vgs: 150mOhm @ 11A, 10V, Power Dissipation (Max): 170W (Tc), Vgs(th) (Max) @ Id: 4V @ 250µA, Supplier Device Package: TO-263 (D2Pak), Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±25V, Drain to Source Voltage (Vdss): 600 V, Gate Charge (Qg) (Max) @ Vgs: 36 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 1440 pF @ 100 V.

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STB28N60M2 STB28N60M2 Hersteller : STMicroelectronics stb28n60m2-1850199.pdf MOSFETs N-channel 600 V, 0.135 Ohm typ 22 A MDmesh M2 Power MOSFETs in D2PAK package
auf Bestellung 872 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
1+4.52 EUR
10+ 3.8 EUR
100+ 3.08 EUR
500+ 2.73 EUR
1000+ 2.22 EUR
2000+ 2.2 EUR
STB28N60M2 STB28N60M2 Hersteller : STMicroelectronics 39701715991589376dm00095328.pdf Trans MOSFET N-CH 600V 22A 3-Pin(2+Tab) D2PAK T/R
Produkt ist nicht verfügbar
STB28N60M2 STB28N60M2 Hersteller : STMicroelectronics 39701715991589376dm00095328.pdf Trans MOSFET N-CH 600V 22A 3-Pin(2+Tab) D2PAK T/R
Produkt ist nicht verfügbar
STB28N60M2 STB28N60M2 Hersteller : STMicroelectronics 39701715991589376dm00095328.pdf Trans MOSFET N-CH 600V 22A 3-Pin(2+Tab) D2PAK T/R
Produkt ist nicht verfügbar
STB28N60M2 Hersteller : STMicroelectronics 39701715991589376dm00095328.pdf Trans MOSFET N-CH 600V 22A 3-Pin(2+Tab) D2PAK T/R
Produkt ist nicht verfügbar
STB28N60M2 STB28N60M2 Hersteller : STMicroelectronics en.DM00095328.pdf Description: MOSFET N-CH 600V 22A D2PAK
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 22A (Tc)
Rds On (Max) @ Id, Vgs: 150mOhm @ 11A, 10V
Power Dissipation (Max): 170W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-263 (D2Pak)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 36 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1440 pF @ 100 V
Produkt ist nicht verfügbar