auf Bestellung 3639 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl | Preis ohne MwSt |
---|---|
1+ | 10.61 EUR |
10+ | 8.94 EUR |
25+ | 8.89 EUR |
100+ | 7.16 EUR |
250+ | 7.13 EUR |
500+ | 6.32 EUR |
1000+ | 5.32 EUR |
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Technische Details STB20NM50FDT4 STMicroelectronics
Description: MOSFET N-CH 500V 20A D2PAK, Packaging: Tape & Reel (TR), Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB, Mounting Type: Surface Mount, Operating Temperature: 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 20A (Tc), Rds On (Max) @ Id, Vgs: 250mOhm @ 10A, 10V, Power Dissipation (Max): 192W (Tc), Vgs(th) (Max) @ Id: 5V @ 250µA, Supplier Device Package: D2PAK, Part Status: Not For New Designs, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±30V, Drain to Source Voltage (Vdss): 500 V, Gate Charge (Qg) (Max) @ Vgs: 53 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 1380 pF @ 25 V.
Weitere Produktangebote STB20NM50FDT4
Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
Preis ohne MwSt |
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STB20NM50FDT4 | Hersteller : STMicroelectronics | Trans MOSFET N-CH 500V 20A 3-Pin(2+Tab) D2PAK T/R |
Produkt ist nicht verfügbar |
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STB20NM50FDT4 | Hersteller : STMicroelectronics | Trans MOSFET N-CH 500V 20A 3-Pin(2+Tab) D2PAK T/R |
Produkt ist nicht verfügbar |
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STB20NM50FDT4 | Hersteller : STMicroelectronics | Trans MOSFET N-CH 500V 20A 3-Pin(2+Tab) D2PAK T/R |
Produkt ist nicht verfügbar |
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STB20NM50FDT4 | Hersteller : STMicroelectronics |
Description: MOSFET N-CH 500V 20A D2PAK Packaging: Tape & Reel (TR) Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 20A (Tc) Rds On (Max) @ Id, Vgs: 250mOhm @ 10A, 10V Power Dissipation (Max): 192W (Tc) Vgs(th) (Max) @ Id: 5V @ 250µA Supplier Device Package: D2PAK Part Status: Not For New Designs Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 500 V Gate Charge (Qg) (Max) @ Vgs: 53 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1380 pF @ 25 V |
Produkt ist nicht verfügbar |
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STB20NM50FDT4 | Hersteller : STMicroelectronics |
Description: MOSFET N-CH 500V 20A D2PAK Packaging: Cut Tape (CT) Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 20A (Tc) Rds On (Max) @ Id, Vgs: 250mOhm @ 10A, 10V Power Dissipation (Max): 192W (Tc) Vgs(th) (Max) @ Id: 5V @ 250µA Supplier Device Package: D2PAK Part Status: Not For New Designs Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 500 V Gate Charge (Qg) (Max) @ Vgs: 53 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1380 pF @ 25 V |
Produkt ist nicht verfügbar |