![SSM6P49NU,LF SSM6P49NU,LF](https://www.mouser.com/images/toshibaamericaelectroniccomponentsinc/lrg/UDFN_6_DSL.jpg)
auf Bestellung 6099 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl | Preis ohne MwSt |
---|---|
5+ | 0.67 EUR |
10+ | 0.57 EUR |
100+ | 0.4 EUR |
500+ | 0.31 EUR |
1000+ | 0.25 EUR |
3000+ | 0.21 EUR |
9000+ | 0.2 EUR |
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Technische Details SSM6P49NU,LF Toshiba
Description: MOSFET 2P-CH 20V 4A 6UDFN, Packaging: Tape & Reel (TR), Package / Case: 6-WDFN Exposed Pad, Mounting Type: Surface Mount, Configuration: 2 P-Channel (Dual), Operating Temperature: 150°C (TJ), Technology: MOSFET (Metal Oxide), Power - Max: 1W, Drain to Source Voltage (Vdss): 20V, Current - Continuous Drain (Id) @ 25°C: 4A, Input Capacitance (Ciss) (Max) @ Vds: 480pF @ 10V, Rds On (Max) @ Id, Vgs: 45mOhm @ 3.5A, 10V, Gate Charge (Qg) (Max) @ Vgs: 6.74nC @ 4.5V, FET Feature: Logic Level Gate, Vgs(th) (Max) @ Id: 1.2V @ 1mA, Supplier Device Package: 6-UDFN (2x2).
Weitere Produktangebote SSM6P49NU,LF nach Preis ab 0.25 EUR bis 0.67 EUR
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SSM6P49NU,LF | Hersteller : Toshiba Semiconductor and Storage |
![]() Packaging: Cut Tape (CT) Package / Case: 6-WDFN Exposed Pad Mounting Type: Surface Mount Configuration: 2 P-Channel (Dual) Operating Temperature: 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 1W Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 4A Input Capacitance (Ciss) (Max) @ Vds: 480pF @ 10V Rds On (Max) @ Id, Vgs: 45mOhm @ 3.5A, 10V Gate Charge (Qg) (Max) @ Vgs: 6.74nC @ 4.5V FET Feature: Logic Level Gate Vgs(th) (Max) @ Id: 1.2V @ 1mA Supplier Device Package: 6-UDFN (2x2) |
auf Bestellung 4760 Stücke: Lieferzeit 10-14 Tag (e) |
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SSM6P49NU,LF Produktcode: 177120 |
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Produkt ist nicht verfügbar
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SSM6P49NU,LF | Hersteller : Toshiba |
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Produkt ist nicht verfügbar |
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SSM6P49NU,LF | Hersteller : Toshiba Semiconductor and Storage |
![]() Packaging: Tape & Reel (TR) Package / Case: 6-WDFN Exposed Pad Mounting Type: Surface Mount Configuration: 2 P-Channel (Dual) Operating Temperature: 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 1W Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 4A Input Capacitance (Ciss) (Max) @ Vds: 480pF @ 10V Rds On (Max) @ Id, Vgs: 45mOhm @ 3.5A, 10V Gate Charge (Qg) (Max) @ Vgs: 6.74nC @ 4.5V FET Feature: Logic Level Gate Vgs(th) (Max) @ Id: 1.2V @ 1mA Supplier Device Package: 6-UDFN (2x2) |
Produkt ist nicht verfügbar |