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SSM6P36FE,LM

SSM6P36FE,LM Toshiba

SSM6P36FE_datasheet_en_20140301-1916200.pdf Hersteller: Toshiba
MOSFET Small Signal MOSFET
auf Bestellung 5989 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
5+0.69 EUR
10+ 0.48 EUR
100+ 0.2 EUR
1000+ 0.12 EUR
8000+ 0.1 EUR
24000+ 0.099 EUR
Mindestbestellmenge: 5
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Technische Details SSM6P36FE,LM Toshiba

Description: MOSFET 2P-CH 20V 0.33A ES6, Packaging: Tape & Reel (TR), Package / Case: SOT-563, SOT-666, Mounting Type: Surface Mount, Configuration: 2 P-Channel (Dual), Operating Temperature: 150°C (TJ), Technology: MOSFET (Metal Oxide), Power - Max: 150mW, Drain to Source Voltage (Vdss): 20V, Current - Continuous Drain (Id) @ 25°C: 330mA, Input Capacitance (Ciss) (Max) @ Vds: 43pF @ 10V, Rds On (Max) @ Id, Vgs: 1.31Ohm @ 100mA, 4.5V, Gate Charge (Qg) (Max) @ Vgs: 1.2nC @ 4V, FET Feature: Logic Level Gate, Vgs(th) (Max) @ Id: 1V @ 1mA, Supplier Device Package: ES6.

Weitere Produktangebote SSM6P36FE,LM nach Preis ab 0.12 EUR bis 0.69 EUR

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SSM6P36FE,LM SSM6P36FE,LM Hersteller : Toshiba Semiconductor and Storage SSM6P36FE_datasheet_en_20140301.pdf?did=11736&prodName=SSM6P36FE Description: MOSFET 2P-CH 20V 0.33A ES6
Packaging: Cut Tape (CT)
Package / Case: SOT-563, SOT-666
Mounting Type: Surface Mount
Configuration: 2 P-Channel (Dual)
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 150mW
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 330mA
Input Capacitance (Ciss) (Max) @ Vds: 43pF @ 10V
Rds On (Max) @ Id, Vgs: 1.31Ohm @ 100mA, 4.5V
Gate Charge (Qg) (Max) @ Vgs: 1.2nC @ 4V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 1V @ 1mA
Supplier Device Package: ES6
auf Bestellung 3637 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
26+0.69 EUR
37+ 0.48 EUR
100+ 0.24 EUR
500+ 0.2 EUR
1000+ 0.15 EUR
2000+ 0.12 EUR
Mindestbestellmenge: 26
SSM6P36FE,LM Hersteller : Toshiba 288docget.jsptypedatasheetlangenpidssm6p36fe.jsptypedatasheetlangenp.pdf Trans MOSFET P-CH Si 20V 0.33A 6-Pin ES T/R
Produkt ist nicht verfügbar
SSM6P36FE,LM SSM6P36FE,LM Hersteller : Toshiba Semiconductor and Storage SSM6P36FE_datasheet_en_20140301.pdf?did=11736&prodName=SSM6P36FE Description: MOSFET 2P-CH 20V 0.33A ES6
Packaging: Tape & Reel (TR)
Package / Case: SOT-563, SOT-666
Mounting Type: Surface Mount
Configuration: 2 P-Channel (Dual)
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 150mW
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 330mA
Input Capacitance (Ciss) (Max) @ Vds: 43pF @ 10V
Rds On (Max) @ Id, Vgs: 1.31Ohm @ 100mA, 4.5V
Gate Charge (Qg) (Max) @ Vgs: 1.2nC @ 4V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 1V @ 1mA
Supplier Device Package: ES6
Produkt ist nicht verfügbar