auf Bestellung 2217 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis ohne MwSt |
|---|---|
| 4+ | 0.7 EUR |
| 10+ | 0.49 EUR |
| 100+ | 0.22 EUR |
| 1000+ | 0.15 EUR |
| 8000+ | 0.13 EUR |
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Technische Details SSM6P15FE(TE85L,F) Toshiba
Description: MOSFET 2P-CH 30V 0.1A ES6, Packaging: Tape & Reel (TR), Package / Case: SOT-563, SOT-666, Mounting Type: Surface Mount, Configuration: 2 P-Channel (Dual), Operating Temperature: 150°C (TJ), Technology: MOSFET (Metal Oxide), Power - Max: 150mW, Drain to Source Voltage (Vdss): 30V, Current - Continuous Drain (Id) @ 25°C: 100mA, Input Capacitance (Ciss) (Max) @ Vds: 9.1pF @ 3V, Rds On (Max) @ Id, Vgs: 12Ohm @ 10mA, 4V, FET Feature: Logic Level Gate, Vgs(th) (Max) @ Id: 1.7V @ 100µA, Supplier Device Package: ES6, Part Status: Active.
Weitere Produktangebote SSM6P15FE(TE85L,F)
| Foto | Bezeichnung | Hersteller | Beschreibung |
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SSM6P15FE(TE85L,F) | Hersteller : Toshiba |
 Trans MOSFET P-CH Si 30V 0.1A 6-Pin ES T/R |
Produkt ist nicht verfügbar |
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SSM6P15FE(TE85L,F) | Hersteller : Toshiba Semiconductor and Storage |
Description: MOSFET 2P-CH 30V 0.1A ES6 Packaging: Tape & Reel (TR) Package / Case: SOT-563, SOT-666 Mounting Type: Surface Mount Configuration: 2 P-Channel (Dual) Operating Temperature: 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 150mW Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 100mA Input Capacitance (Ciss) (Max) @ Vds: 9.1pF @ 3V Rds On (Max) @ Id, Vgs: 12Ohm @ 10mA, 4V FET Feature: Logic Level Gate Vgs(th) (Max) @ Id: 1.7V @ 100µA Supplier Device Package: ES6 Part Status: Active |
Produkt ist nicht verfügbar |
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SSM6P15FE(TE85L,F) | Hersteller : Toshiba Semiconductor and Storage |
Description: MOSFET 2P-CH 30V 0.1A ES6 Packaging: Cut Tape (CT) Package / Case: SOT-563, SOT-666 Mounting Type: Surface Mount Configuration: 2 P-Channel (Dual) Operating Temperature: 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 150mW Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 100mA Input Capacitance (Ciss) (Max) @ Vds: 9.1pF @ 3V Rds On (Max) @ Id, Vgs: 12Ohm @ 10mA, 4V FET Feature: Logic Level Gate Vgs(th) (Max) @ Id: 1.7V @ 100µA Supplier Device Package: ES6 Part Status: Active |
Produkt ist nicht verfügbar |