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SSM6N815R,LF Toshiba Semiconductor and Storage
![SSM6N815R_datasheet_en_20170829.pdf?did=58964&prodName=SSM6N815R](/images/adobe-acrobat.png)
Description: MOSFET 2N-CH 100V 2A 6TSOPF
Packaging: Cut Tape (CT)
Package / Case: 6-SMD, Flat Leads
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: 150°C
Technology: MOSFET (Metal Oxide)
Power - Max: 1.8W (Ta)
Drain to Source Voltage (Vdss): 100V
Current - Continuous Drain (Id) @ 25°C: 2A (Ta)
Input Capacitance (Ciss) (Max) @ Vds: 290pF @ 15V
Rds On (Max) @ Id, Vgs: 103mOhm @ 2A, 10V
Gate Charge (Qg) (Max) @ Vgs: 3.1nC @ 4.5V
FET Feature: Logic Level Gate, 4V Drive
Vgs(th) (Max) @ Id: 2.5V @ 100µA
Supplier Device Package: 6-TSOP-F
Part Status: Active
auf Bestellung 1573 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl | Preis ohne MwSt |
---|---|
25+ | 0.7 EUR |
30+ | 0.59 EUR |
100+ | 0.41 EUR |
500+ | 0.32 EUR |
1000+ | 0.26 EUR |
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Technische Details SSM6N815R,LF Toshiba Semiconductor and Storage
Description: MOSFET 2N-CH 100V 2A 6TSOPF, Packaging: Tape & Reel (TR), Package / Case: 6-SMD, Flat Leads, Mounting Type: Surface Mount, Configuration: 2 N-Channel (Dual), Operating Temperature: 150°C, Technology: MOSFET (Metal Oxide), Power - Max: 1.8W (Ta), Drain to Source Voltage (Vdss): 100V, Current - Continuous Drain (Id) @ 25°C: 2A (Ta), Input Capacitance (Ciss) (Max) @ Vds: 290pF @ 15V, Rds On (Max) @ Id, Vgs: 103mOhm @ 2A, 10V, Gate Charge (Qg) (Max) @ Vgs: 3.1nC @ 4.5V, FET Feature: Logic Level Gate, 4V Drive, Vgs(th) (Max) @ Id: 2.5V @ 100µA, Supplier Device Package: 6-TSOP-F, Part Status: Active.
Weitere Produktangebote SSM6N815R,LF nach Preis ab 0.21 EUR bis 0.8 EUR
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SSM6N815R,LF | Hersteller : Toshiba |
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auf Bestellung 79223 Stücke: Lieferzeit 197-201 Tag (e) |
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SSM6N815R,LF Produktcode: 149006 |
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Produkt ist nicht verfügbar
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SSM6N815R,LF | Hersteller : Toshiba Semiconductor and Storage |
![]() Packaging: Tape & Reel (TR) Package / Case: 6-SMD, Flat Leads Mounting Type: Surface Mount Configuration: 2 N-Channel (Dual) Operating Temperature: 150°C Technology: MOSFET (Metal Oxide) Power - Max: 1.8W (Ta) Drain to Source Voltage (Vdss): 100V Current - Continuous Drain (Id) @ 25°C: 2A (Ta) Input Capacitance (Ciss) (Max) @ Vds: 290pF @ 15V Rds On (Max) @ Id, Vgs: 103mOhm @ 2A, 10V Gate Charge (Qg) (Max) @ Vgs: 3.1nC @ 4.5V FET Feature: Logic Level Gate, 4V Drive Vgs(th) (Max) @ Id: 2.5V @ 100µA Supplier Device Package: 6-TSOP-F Part Status: Active |
Produkt ist nicht verfügbar |