SSM6N7002KFU,LF Toshiba Semiconductor and Storage
Hersteller: Toshiba Semiconductor and StorageDescription: MOSFET 2N-CH 60V 0.3A US6
Packaging: Tape & Reel (TR)
Package / Case: 6-TSSOP, SC-88, SOT-363
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 285mW
Drain to Source Voltage (Vdss): 60V
Current - Continuous Drain (Id) @ 25°C: 300mA
Input Capacitance (Ciss) (Max) @ Vds: 40pF @ 10V
Rds On (Max) @ Id, Vgs: 1.5Ohm @ 100mA, 10V
Gate Charge (Qg) (Max) @ Vgs: 0.6nC @ 4.5V
Vgs(th) (Max) @ Id: 2.1V @ 250µA
Supplier Device Package: US6
Part Status: Active
auf Bestellung 399000 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis ohne MwSt |
|---|---|
| 3000+ | 0.067 EUR |
| 6000+ | 0.06 EUR |
| 9000+ | 0.056 EUR |
| 15000+ | 0.052 EUR |
| 21000+ | 0.05 EUR |
| 30000+ | 0.047 EUR |
| 75000+ | 0.042 EUR |
| 150000+ | 0.039 EUR |
| 300000+ | 0.036 EUR |
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Technische Details SSM6N7002KFU,LF Toshiba Semiconductor and Storage
Description: MOSFET 2N-CH 60V 0.3A US6, Packaging: Tape & Reel (TR), Package / Case: 6-TSSOP, SC-88, SOT-363, Mounting Type: Surface Mount, Configuration: 2 N-Channel (Dual), Operating Temperature: 150°C (TJ), Technology: MOSFET (Metal Oxide), Power - Max: 285mW, Drain to Source Voltage (Vdss): 60V, Current - Continuous Drain (Id) @ 25°C: 300mA, Input Capacitance (Ciss) (Max) @ Vds: 40pF @ 10V, Rds On (Max) @ Id, Vgs: 1.5Ohm @ 100mA, 10V, Gate Charge (Qg) (Max) @ Vgs: 0.6nC @ 4.5V, Vgs(th) (Max) @ Id: 2.1V @ 250µA, Supplier Device Package: US6, Part Status: Active.
Weitere Produktangebote SSM6N7002KFU,LF nach Preis ab 0.048 EUR bis 0.38 EUR
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SSM6N7002KFU,LF | Hersteller : Toshiba Semiconductor and Storage |
Description: MOSFET 2N-CH 60V 0.3A US6 Packaging: Cut Tape (CT) Package / Case: 6-TSSOP, SC-88, SOT-363 Mounting Type: Surface Mount Configuration: 2 N-Channel (Dual) Operating Temperature: 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 285mW Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25°C: 300mA Input Capacitance (Ciss) (Max) @ Vds: 40pF @ 10V Rds On (Max) @ Id, Vgs: 1.5Ohm @ 100mA, 10V Gate Charge (Qg) (Max) @ Vgs: 0.6nC @ 4.5V Vgs(th) (Max) @ Id: 2.1V @ 250µA Supplier Device Package: US6 Part Status: Active |
auf Bestellung 409677 Stücke: Lieferzeit 10-14 Tag (e) |
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