Technische Details SSM6N7002KFU,LF(T Toshiba
Category: Multi channel transistors, Description: Transistor: N-MOSFET x2; unipolar; 60V; 0.3A; 285mW; SC88, Type of transistor: N-MOSFET x2, Polarisation: unipolar, Drain-source voltage: 60V, Drain current: 0.3A, Power dissipation: 285mW, Case: SC88, Gate-source voltage: ±20V, On-state resistance: 1.75Ω, Mounting: SMD, Gate charge: 0.39nC, Kind of package: reel; tape, Kind of channel: enhanced, Features of semiconductor devices: ESD protected gate, Anzahl je Verpackung: 5 Stücke.
Weitere Produktangebote SSM6N7002KFU,LF(T
Foto | Bezeichnung | Hersteller | Beschreibung |
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SSM6N7002KFU,LF(T | Hersteller : TOSHIBA |
![]() Description: Transistor: N-MOSFET x2; unipolar; 60V; 0.3A; 285mW; SC88 Type of transistor: N-MOSFET x2 Polarisation: unipolar Drain-source voltage: 60V Drain current: 0.3A Power dissipation: 285mW Case: SC88 Gate-source voltage: ±20V On-state resistance: 1.75Ω Mounting: SMD Gate charge: 0.39nC Kind of package: reel; tape Kind of channel: enhanced Features of semiconductor devices: ESD protected gate Anzahl je Verpackung: 5 Stücke |
Produkt ist nicht verfügbar |
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SSM6N7002KFU,LF(T | Hersteller : TOSHIBA |
![]() Description: Transistor: N-MOSFET x2; unipolar; 60V; 0.3A; 285mW; SC88 Type of transistor: N-MOSFET x2 Polarisation: unipolar Drain-source voltage: 60V Drain current: 0.3A Power dissipation: 285mW Case: SC88 Gate-source voltage: ±20V On-state resistance: 1.75Ω Mounting: SMD Gate charge: 0.39nC Kind of package: reel; tape Kind of channel: enhanced Features of semiconductor devices: ESD protected gate |
Produkt ist nicht verfügbar |