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SSM6N43FU,LF

SSM6N43FU,LF Toshiba

SSM6N43FU_datasheet_en_20140301-1022859.pdf Hersteller: Toshiba
MOSFETs Small-signal MOSFET
auf Bestellung 37926 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
5+0.69 EUR
10+ 0.48 EUR
100+ 0.2 EUR
1000+ 0.15 EUR
3000+ 0.12 EUR
9000+ 0.1 EUR
24000+ 0.099 EUR
Mindestbestellmenge: 5
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Technische Details SSM6N43FU,LF Toshiba

Description: MOSFET 2N-CH 20V 0.5A US6, Packaging: Tape & Reel (TR), Package / Case: 6-TSSOP, SC-88, SOT-363, Mounting Type: Surface Mount, Configuration: 2 N-Channel (Dual), Operating Temperature: 150°C (TJ), Technology: MOSFET (Metal Oxide), Power - Max: 200mW, Drain to Source Voltage (Vdss): 20V, Current - Continuous Drain (Id) @ 25°C: 500mA, Input Capacitance (Ciss) (Max) @ Vds: 46pF @ 10V, Rds On (Max) @ Id, Vgs: 630mOhm @ 200mA, 5V, Gate Charge (Qg) (Max) @ Vgs: 1.23nC @ 4V, FET Feature: Logic Level Gate, 1.5V Drive, Vgs(th) (Max) @ Id: 1V @ 1mA, Supplier Device Package: US6.

Weitere Produktangebote SSM6N43FU,LF nach Preis ab 0.15 EUR bis 0.7 EUR

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SSM6N43FU,LF SSM6N43FU,LF Hersteller : Toshiba Semiconductor and Storage SSM6N43FU_datasheet_en_20140301.pdf?did=407&prodName=SSM6N43FU Description: MOSFET 2N-CH 20V 0.5A US6
Packaging: Cut Tape (CT)
Package / Case: 6-TSSOP, SC-88, SOT-363
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 200mW
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 500mA
Input Capacitance (Ciss) (Max) @ Vds: 46pF @ 10V
Rds On (Max) @ Id, Vgs: 630mOhm @ 200mA, 5V
Gate Charge (Qg) (Max) @ Vgs: 1.23nC @ 4V
FET Feature: Logic Level Gate, 1.5V Drive
Vgs(th) (Max) @ Id: 1V @ 1mA
Supplier Device Package: US6
auf Bestellung 5950 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
25+0.7 EUR
36+ 0.5 EUR
100+ 0.25 EUR
500+ 0.21 EUR
1000+ 0.15 EUR
Mindestbestellmenge: 25
SSM6N43FU,LF SSM6N43FU,LF Hersteller : Toshiba Semiconductor and Storage SSM6N43FU_datasheet_en_20140301.pdf?did=407&prodName=SSM6N43FU Description: MOSFET 2N-CH 20V 0.5A US6
Packaging: Tape & Reel (TR)
Package / Case: 6-TSSOP, SC-88, SOT-363
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 200mW
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 500mA
Input Capacitance (Ciss) (Max) @ Vds: 46pF @ 10V
Rds On (Max) @ Id, Vgs: 630mOhm @ 200mA, 5V
Gate Charge (Qg) (Max) @ Vgs: 1.23nC @ 4V
FET Feature: Logic Level Gate, 1.5V Drive
Vgs(th) (Max) @ Id: 1V @ 1mA
Supplier Device Package: US6
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