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SSM6N37FU,LF

SSM6N37FU,LF Toshiba Semiconductor and Storage

SSM6N37FU_datasheet_en_20140301.pdf?did=6227&prodName=SSM6N37FU Hersteller: Toshiba Semiconductor and Storage
Description: MOSFET 2N-CH 20V 0.25A US6
Packaging: Tape & Reel (TR)
Package / Case: 6-TSSOP, SC-88, SOT-363
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: 150°C
Technology: MOSFET (Metal Oxide)
Power - Max: 300mW
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 250mA (Ta)
Input Capacitance (Ciss) (Max) @ Vds: 12pF @ 10V
Rds On (Max) @ Id, Vgs: 2.2Ohm @ 100mA, 4.5V
FET Feature: Logic Level Gate, 1.5V Drive
Vgs(th) (Max) @ Id: 1V @ 1mA
Supplier Device Package: US6
auf Bestellung 201000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
3000+0.11 EUR
6000+ 0.099 EUR
9000+ 0.094 EUR
15000+ 0.087 EUR
21000+ 0.084 EUR
30000+ 0.08 EUR
75000+ 0.072 EUR
150000+ 0.069 EUR
Mindestbestellmenge: 3000
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Technische Details SSM6N37FU,LF Toshiba Semiconductor and Storage

Description: MOSFET 2N-CH 20V 0.25A US6, Packaging: Tape & Reel (TR), Package / Case: 6-TSSOP, SC-88, SOT-363, Mounting Type: Surface Mount, Configuration: 2 N-Channel (Dual), Operating Temperature: 150°C, Technology: MOSFET (Metal Oxide), Power - Max: 300mW, Drain to Source Voltage (Vdss): 20V, Current - Continuous Drain (Id) @ 25°C: 250mA (Ta), Input Capacitance (Ciss) (Max) @ Vds: 12pF @ 10V, Rds On (Max) @ Id, Vgs: 2.2Ohm @ 100mA, 4.5V, FET Feature: Logic Level Gate, 1.5V Drive, Vgs(th) (Max) @ Id: 1V @ 1mA, Supplier Device Package: US6.

Weitere Produktangebote SSM6N37FU,LF nach Preis ab 0.083 EUR bis 0.59 EUR

Foto Bezeichnung Hersteller Beschreibung Verfügbarkeit
Preis ohne MwSt
SSM6N37FU,LF SSM6N37FU,LF Hersteller : Toshiba Semiconductor and Storage SSM6N37FU_datasheet_en_20140301.pdf?did=6227&prodName=SSM6N37FU Description: MOSFET 2N-CH 20V 0.25A US6
Packaging: Cut Tape (CT)
Package / Case: 6-TSSOP, SC-88, SOT-363
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: 150°C
Technology: MOSFET (Metal Oxide)
Power - Max: 300mW
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 250mA (Ta)
Input Capacitance (Ciss) (Max) @ Vds: 12pF @ 10V
Rds On (Max) @ Id, Vgs: 2.2Ohm @ 100mA, 4.5V
FET Feature: Logic Level Gate, 1.5V Drive
Vgs(th) (Max) @ Id: 1V @ 1mA
Supplier Device Package: US6
auf Bestellung 206459 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
35+0.51 EUR
55+ 0.32 EUR
100+ 0.2 EUR
500+ 0.15 EUR
1000+ 0.13 EUR
Mindestbestellmenge: 35
SSM6N37FU,LF SSM6N37FU,LF Hersteller : Toshiba SSM6N37FU_datasheet_en_20140301-1138317.pdf MOSFET Small-signal MOSFET ID=0.25A VDSS=20V
auf Bestellung 14408 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
5+0.59 EUR
10+ 0.41 EUR
100+ 0.17 EUR
1000+ 0.13 EUR
3000+ 0.1 EUR
9000+ 0.086 EUR
24000+ 0.083 EUR
Mindestbestellmenge: 5