![SSM6N15AFU,LF SSM6N15AFU,LF](https://www.mouser.com/images/toshibaamericaelectroniccomponentsinc/lrg/SOT_363_US6_SC88_6_SPL.jpg)
auf Bestellung 471654 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl | Preis ohne MwSt |
---|---|
6+ | 0.54 EUR |
10+ | 0.37 EUR |
100+ | 0.15 EUR |
1000+ | 0.11 EUR |
3000+ | 0.092 EUR |
9000+ | 0.079 EUR |
24000+ | 0.076 EUR |
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Technische Details SSM6N15AFU,LF Toshiba
Description: MOSFET 2N-CH 30V 0.1A US6, Packaging: Tape & Reel (TR), Package / Case: 6-TSSOP, SC-88, SOT-363, Mounting Type: Surface Mount, Configuration: 2 N-Channel (Dual), Operating Temperature: 150°C (TJ), Technology: MOSFET (Metal Oxide), Power - Max: 300mW, Drain to Source Voltage (Vdss): 30V, Current - Continuous Drain (Id) @ 25°C: 100mA, Input Capacitance (Ciss) (Max) @ Vds: 13.5pF @ 3V, Rds On (Max) @ Id, Vgs: 3.6Ohm @ 10mA, 4V, FET Feature: Logic Level Gate, Vgs(th) (Max) @ Id: 1.5V @ 100µA, Supplier Device Package: US6, Part Status: Active.
Weitere Produktangebote SSM6N15AFU,LF nach Preis ab 0.12 EUR bis 0.55 EUR
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SSM6N15AFU,LF | Hersteller : Toshiba Semiconductor and Storage |
![]() Packaging: Cut Tape (CT) Package / Case: 6-TSSOP, SC-88, SOT-363 Mounting Type: Surface Mount Configuration: 2 N-Channel (Dual) Operating Temperature: 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 300mW Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 100mA Input Capacitance (Ciss) (Max) @ Vds: 13.5pF @ 3V Rds On (Max) @ Id, Vgs: 3.6Ohm @ 10mA, 4V FET Feature: Logic Level Gate Vgs(th) (Max) @ Id: 1.5V @ 100µA Supplier Device Package: US6 Part Status: Active |
auf Bestellung 1024 Stücke: Lieferzeit 10-14 Tag (e) |
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SSM6N15AFU,LF Produktcode: 178546 |
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SSM6N15AFU,LF | Hersteller : Toshiba |
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SSM6N15AFU,LF | Hersteller : Toshiba |
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Produkt ist nicht verfügbar |
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SSM6N15AFU,LF | Hersteller : Toshiba |
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Produkt ist nicht verfügbar |
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SSM6N15AFU,LF | Hersteller : Toshiba Semiconductor and Storage |
![]() Packaging: Tape & Reel (TR) Package / Case: 6-TSSOP, SC-88, SOT-363 Mounting Type: Surface Mount Configuration: 2 N-Channel (Dual) Operating Temperature: 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 300mW Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 100mA Input Capacitance (Ciss) (Max) @ Vds: 13.5pF @ 3V Rds On (Max) @ Id, Vgs: 3.6Ohm @ 10mA, 4V FET Feature: Logic Level Gate Vgs(th) (Max) @ Id: 1.5V @ 100µA Supplier Device Package: US6 Part Status: Active |
Produkt ist nicht verfügbar |