SSM6L820R,LXHF Toshiba Semiconductor and Storage
![SSM6L820R_datasheet_en_20210603.pdf?did=63678&prodName=SSM6L820R](/images/adobe-acrobat.png)
Description: MOSFET N/P-CH 30V/20V 4A 6TSOPF
Packaging: Tape & Reel (TR)
Package / Case: 6-SMD, Flat Leads
Mounting Type: Surface Mount
Configuration: N and P-Channel
Operating Temperature: 150°C
Technology: MOSFET (Metal Oxide)
Power - Max: 1.4W (Ta)
Drain to Source Voltage (Vdss): 30V, 20V
Current - Continuous Drain (Id) @ 25°C: 4A (Ta)
Input Capacitance (Ciss) (Max) @ Vds: 310pF @ 15V, 480pF @ 10V
Rds On (Max) @ Id, Vgs: 39.1mOhm @ 2A, 4.5V, 45mOhm @ 3.5A, 10V
Gate Charge (Qg) (Max) @ Vgs: 3.2nC @ 4.5V, 6.7nC @4.5V
Vgs(th) (Max) @ Id: 1V @ 1mA, 1.2V @ 1mA
Supplier Device Package: 6-TSOP-F
Grade: Automotive
Part Status: Active
Qualification: AEC-Q101
auf Bestellung 3000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl | Preis ohne MwSt |
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3000+ | 0.34 EUR |
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Technische Details SSM6L820R,LXHF Toshiba Semiconductor and Storage
Description: MOSFET N/P-CH 30V/20V 4A 6TSOPF, Packaging: Tape & Reel (TR), Package / Case: 6-SMD, Flat Leads, Mounting Type: Surface Mount, Configuration: N and P-Channel, Operating Temperature: 150°C, Technology: MOSFET (Metal Oxide), Power - Max: 1.4W (Ta), Drain to Source Voltage (Vdss): 30V, 20V, Current - Continuous Drain (Id) @ 25°C: 4A (Ta), Input Capacitance (Ciss) (Max) @ Vds: 310pF @ 15V, 480pF @ 10V, Rds On (Max) @ Id, Vgs: 39.1mOhm @ 2A, 4.5V, 45mOhm @ 3.5A, 10V, Gate Charge (Qg) (Max) @ Vgs: 3.2nC @ 4.5V, 6.7nC @4.5V, Vgs(th) (Max) @ Id: 1V @ 1mA, 1.2V @ 1mA, Supplier Device Package: 6-TSOP-F, Grade: Automotive, Part Status: Active, Qualification: AEC-Q101.
Weitere Produktangebote SSM6L820R,LXHF nach Preis ab 0.37 EUR bis 0.99 EUR
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SSM6L820R,LXHF | Hersteller : Toshiba Semiconductor and Storage |
![]() Packaging: Cut Tape (CT) Package / Case: 6-SMD, Flat Leads Mounting Type: Surface Mount Configuration: N and P-Channel Operating Temperature: 150°C Technology: MOSFET (Metal Oxide) Power - Max: 1.4W (Ta) Drain to Source Voltage (Vdss): 30V, 20V Current - Continuous Drain (Id) @ 25°C: 4A (Ta) Input Capacitance (Ciss) (Max) @ Vds: 310pF @ 15V, 480pF @ 10V Rds On (Max) @ Id, Vgs: 39.1mOhm @ 2A, 4.5V, 45mOhm @ 3.5A, 10V Gate Charge (Qg) (Max) @ Vgs: 3.2nC @ 4.5V, 6.7nC @4.5V Vgs(th) (Max) @ Id: 1V @ 1mA, 1.2V @ 1mA Supplier Device Package: 6-TSOP-F Grade: Automotive Part Status: Active Qualification: AEC-Q101 |
auf Bestellung 5983 Stücke: Lieferzeit 10-14 Tag (e) |
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SSM6L820R,LXHF | Hersteller : Toshiba |
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auf Bestellung 5408 Stücke: Lieferzeit 10-14 Tag (e) |
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