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SSM6L36TU,LF

SSM6L36TU,LF Toshiba Semiconductor and Storage

SSM6L36TU_datasheet_en_20140301.pdf?did=11712&prodName=SSM6L36TU Hersteller: Toshiba Semiconductor and Storage
Description: MOSFET N/P-CH 20V 0.5A UF6
Packaging: Cut Tape (CT)
Package / Case: 6-SMD, Flat Leads
Mounting Type: Surface Mount
Configuration: N and P-Channel
Operating Temperature: 150°C
Technology: MOSFET (Metal Oxide)
Power - Max: 500mW (Ta)
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 500mA (Ta), 330mA (Ta)
Input Capacitance (Ciss) (Max) @ Vds: 46pF @ 10V, 43pF @ 10V
Rds On (Max) @ Id, Vgs: 630mOhm @ 200mA, 5V, 1.31Ohm @ 100mA, 4.5V
Gate Charge (Qg) (Max) @ Vgs: 1.23nC @ 4V, 1.2nC @ 4V
FET Feature: Logic Level Gate, 1.5V Drive
Vgs(th) (Max) @ Id: 1V @ 1mA
Supplier Device Package: UF6
Part Status: Active
auf Bestellung 3990 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
31+0.58 EUR
39+ 0.45 EUR
100+ 0.27 EUR
500+ 0.25 EUR
1000+ 0.17 EUR
Mindestbestellmenge: 31
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Technische Details SSM6L36TU,LF Toshiba Semiconductor and Storage

Description: MOSFET N/P-CH 20V 0.5A UF6, Packaging: Tape & Reel (TR), Package / Case: 6-SMD, Flat Leads, Mounting Type: Surface Mount, Configuration: N and P-Channel, Operating Temperature: 150°C, Technology: MOSFET (Metal Oxide), Power - Max: 500mW (Ta), Drain to Source Voltage (Vdss): 20V, Current - Continuous Drain (Id) @ 25°C: 500mA (Ta), 330mA (Ta), Input Capacitance (Ciss) (Max) @ Vds: 46pF @ 10V, 43pF @ 10V, Rds On (Max) @ Id, Vgs: 630mOhm @ 200mA, 5V, 1.31Ohm @ 100mA, 4.5V, Gate Charge (Qg) (Max) @ Vgs: 1.23nC @ 4V, 1.2nC @ 4V, FET Feature: Logic Level Gate, 1.5V Drive, Vgs(th) (Max) @ Id: 1V @ 1mA, Supplier Device Package: UF6, Part Status: Active.

Weitere Produktangebote SSM6L36TU,LF nach Preis ab 0.14 EUR bis 0.59 EUR

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SSM6L36TU,LF SSM6L36TU,LF Hersteller : Toshiba SSM6L36TU_datasheet_en_20140301-1915918.pdf MOSFET Small Signal MOSFET N-ch + P-ch VDSS=20V, VGSS=+/-10V, ID=0.5A, RDS(ON)=0.66ohm a. 4.5V, in UF6 package
auf Bestellung 2979 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
5+0.59 EUR
10+ 0.46 EUR
100+ 0.25 EUR
1000+ 0.17 EUR
3000+ 0.15 EUR
9000+ 0.14 EUR
Mindestbestellmenge: 5
SSM6L36TU,LF SSM6L36TU,LF Hersteller : Toshiba Semiconductor and Storage SSM6L36TU_datasheet_en_20140301.pdf?did=11712&prodName=SSM6L36TU Description: MOSFET N/P-CH 20V 0.5A UF6
Packaging: Tape & Reel (TR)
Package / Case: 6-SMD, Flat Leads
Mounting Type: Surface Mount
Configuration: N and P-Channel
Operating Temperature: 150°C
Technology: MOSFET (Metal Oxide)
Power - Max: 500mW (Ta)
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 500mA (Ta), 330mA (Ta)
Input Capacitance (Ciss) (Max) @ Vds: 46pF @ 10V, 43pF @ 10V
Rds On (Max) @ Id, Vgs: 630mOhm @ 200mA, 5V, 1.31Ohm @ 100mA, 4.5V
Gate Charge (Qg) (Max) @ Vgs: 1.23nC @ 4V, 1.2nC @ 4V
FET Feature: Logic Level Gate, 1.5V Drive
Vgs(th) (Max) @ Id: 1V @ 1mA
Supplier Device Package: UF6
Part Status: Active
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