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SSM6J511NU,LF

SSM6J511NU,LF Toshiba

SSM6J511NU_datasheet_en_20170418-1092777.pdf Hersteller: Toshiba
MOSFET Small-signal MOSFET Power MGMT switch
auf Bestellung 2274 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
4+0.77 EUR
10+ 0.59 EUR
100+ 0.33 EUR
1000+ 0.22 EUR
3000+ 0.18 EUR
9000+ 0.17 EUR
Mindestbestellmenge: 4
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Technische Details SSM6J511NU,LF Toshiba

Description: MOSFET P-CH 12V 14A 6UDFNB, Packaging: Tape & Reel (TR), Package / Case: 6-WDFN Exposed Pad, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: P-Channel, Current - Continuous Drain (Id) @ 25°C: 14A (Ta), Rds On (Max) @ Id, Vgs: 9.1mOhm @ 4A, 8V, Vgs(th) (Max) @ Id: 1V @ 1mA, Supplier Device Package: 6-UDFNB (2x2), Part Status: Active, Drain to Source Voltage (Vdss): 12 V, Gate Charge (Qg) (Max) @ Vgs: 47 nC @ 4.5 V, Input Capacitance (Ciss) (Max) @ Vds: 3350 pF @ 6 V.

Weitere Produktangebote SSM6J511NU,LF nach Preis ab 0.22 EUR bis 0.77 EUR

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SSM6J511NU,LF SSM6J511NU,LF Hersteller : Toshiba Semiconductor and Storage SSM6J511NU_datasheet_en_20170418.pdf?did=30767&prodName=SSM6J511NU Description: MOSFET P-CH 12V 14A 6UDFNB
Packaging: Cut Tape (CT)
Package / Case: 6-WDFN Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 14A (Ta)
Rds On (Max) @ Id, Vgs: 9.1mOhm @ 4A, 8V
Vgs(th) (Max) @ Id: 1V @ 1mA
Supplier Device Package: 6-UDFNB (2x2)
Part Status: Active
Drain to Source Voltage (Vdss): 12 V
Gate Charge (Qg) (Max) @ Vgs: 47 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 3350 pF @ 6 V
auf Bestellung 1808 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
23+0.77 EUR
30+ 0.59 EUR
100+ 0.36 EUR
500+ 0.33 EUR
1000+ 0.22 EUR
Mindestbestellmenge: 23
SSM6J511NU,LF SSM6J511NU,LF Hersteller : Toshiba Semiconductor and Storage SSM6J511NU_datasheet_en_20170418.pdf?did=30767&prodName=SSM6J511NU Description: MOSFET P-CH 12V 14A 6UDFNB
Packaging: Tape & Reel (TR)
Package / Case: 6-WDFN Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 14A (Ta)
Rds On (Max) @ Id, Vgs: 9.1mOhm @ 4A, 8V
Vgs(th) (Max) @ Id: 1V @ 1mA
Supplier Device Package: 6-UDFNB (2x2)
Part Status: Active
Drain to Source Voltage (Vdss): 12 V
Gate Charge (Qg) (Max) @ Vgs: 47 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 3350 pF @ 6 V
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