SSM6J501NU,LF Toshiba Semiconductor and Storage
Hersteller: Toshiba Semiconductor and Storage
Description: MOSFET P-CH 20V 10A 6UDFNB
Packaging: Tape & Reel (TR)
Package / Case: 6-WDFN Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 10A (Ta)
Rds On (Max) @ Id, Vgs: 15.3mOhm @ 4A, 4.5V
Power Dissipation (Max): 1W (Ta)
Vgs(th) (Max) @ Id: 1V @ 1mA
Supplier Device Package: 6-UDFNB (2x2)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V
Vgs (Max): ±8V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 29.9 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 2600 pF @ 10 V
Description: MOSFET P-CH 20V 10A 6UDFNB
Packaging: Tape & Reel (TR)
Package / Case: 6-WDFN Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 10A (Ta)
Rds On (Max) @ Id, Vgs: 15.3mOhm @ 4A, 4.5V
Power Dissipation (Max): 1W (Ta)
Vgs(th) (Max) @ Id: 1V @ 1mA
Supplier Device Package: 6-UDFNB (2x2)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V
Vgs (Max): ±8V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 29.9 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 2600 pF @ 10 V
auf Bestellung 45000 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis ohne MwSt |
|---|---|
| 3000+ | 0.2 EUR |
| 9000+ | 0.18 EUR |
| 30000+ | 0.17 EUR |
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Technische Details SSM6J501NU,LF Toshiba Semiconductor and Storage
Description: MOSFET P-CH 20V 10A 6UDFNB, Packaging: Tape & Reel (TR), Package / Case: 6-WDFN Exposed Pad, Mounting Type: Surface Mount, Operating Temperature: 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: P-Channel, Current - Continuous Drain (Id) @ 25°C: 10A (Ta), Rds On (Max) @ Id, Vgs: 15.3mOhm @ 4A, 4.5V, Power Dissipation (Max): 1W (Ta), Vgs(th) (Max) @ Id: 1V @ 1mA, Supplier Device Package: 6-UDFNB (2x2), Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V, Vgs (Max): ±8V, Drain to Source Voltage (Vdss): 20 V, Gate Charge (Qg) (Max) @ Vgs: 29.9 nC @ 4.5 V, Input Capacitance (Ciss) (Max) @ Vds: 2600 pF @ 10 V.
Weitere Produktangebote SSM6J501NU,LF nach Preis ab 0.18 EUR bis 0.77 EUR
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SSM6J501NU,LF | Hersteller : Toshiba Semiconductor and Storage |
Description: MOSFET P-CH 20V 10A 6UDFNB Packaging: Cut Tape (CT) Package / Case: 6-WDFN Exposed Pad Mounting Type: Surface Mount Operating Temperature: 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 10A (Ta) Rds On (Max) @ Id, Vgs: 15.3mOhm @ 4A, 4.5V Power Dissipation (Max): 1W (Ta) Vgs(th) (Max) @ Id: 1V @ 1mA Supplier Device Package: 6-UDFNB (2x2) Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V Vgs (Max): ±8V Drain to Source Voltage (Vdss): 20 V Gate Charge (Qg) (Max) @ Vgs: 29.9 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 2600 pF @ 10 V |
auf Bestellung 45065 Stücke: Lieferzeit 10-14 Tag (e) |
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SSM6J501NU,LF | Hersteller : Toshiba |
 MOSFET PWR MGT 1.5V Drive P-Ch MOS -20V |
auf Bestellung 29532 Stücke: Lieferzeit 10-14 Tag (e) |
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SSM6J501NU,LF | Hersteller : TOSHIBA |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -20V; -10A; Idm: -30A; 1W; uDFN6 Kind of package: reel; tape Mounting: SMD Pulsed drain current: -30A Power dissipation: 1W Gate charge: 29.9nC Polarisation: unipolar Features of semiconductor devices: ESD protected gate Drain current: -10A Kind of channel: enhanced Drain-source voltage: -20V Type of transistor: P-MOSFET Gate-source voltage: ±8V Case: uDFN6 On-state resistance: 43mΩ Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
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SSM6J501NU,LF | Hersteller : TOSHIBA |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -20V; -10A; Idm: -30A; 1W; uDFN6 Kind of package: reel; tape Mounting: SMD Pulsed drain current: -30A Power dissipation: 1W Gate charge: 29.9nC Polarisation: unipolar Features of semiconductor devices: ESD protected gate Drain current: -10A Kind of channel: enhanced Drain-source voltage: -20V Type of transistor: P-MOSFET Gate-source voltage: ±8V Case: uDFN6 On-state resistance: 43mΩ |
Produkt ist nicht verfügbar |