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SSM6J401TU,LF Toshiba
![SSM6J401TU_datasheet_en_20240416-1627155.pdf](/images/adobe-acrobat.png)
MOSFET Small Signal MOSFET P-ch VDSS=-30V, VGSS=+/-20V, ID=-2.5A, RDS(ON)=0.145Ohm a. 4V, in UF6 package
auf Bestellung 5935 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl | Preis ohne MwSt |
---|---|
4+ | 0.74 EUR |
10+ | 0.58 EUR |
100+ | 0.32 EUR |
1000+ | 0.22 EUR |
3000+ | 0.2 EUR |
9000+ | 0.17 EUR |
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Technische Details SSM6J401TU,LF Toshiba
Description: MOSFET P-CH 30V 2.5A UF6, Packaging: Tape & Reel (TR), Package / Case: 6-SMD, Flat Leads, Mounting Type: Surface Mount, Operating Temperature: 150°C, Technology: MOSFET (Metal Oxide), FET Type: P-Channel, Current - Continuous Drain (Id) @ 25°C: 2.5A (Ta), Rds On (Max) @ Id, Vgs: 73mOhm @ 2A, 10V, Power Dissipation (Max): 500mW (Ta), Vgs(th) (Max) @ Id: 2.6V @ 1mA, Supplier Device Package: UF6, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 4V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 30 V, Gate Charge (Qg) (Max) @ Vgs: 16 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 730 pF @ 15 V.
Weitere Produktangebote SSM6J401TU,LF nach Preis ab 0.22 EUR bis 0.74 EUR
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SSM6J401TU,LF | Hersteller : Toshiba Semiconductor and Storage |
Description: MOSFET P-CH 30V 2.5A UF6 Packaging: Cut Tape (CT) Package / Case: 6-SMD, Flat Leads Mounting Type: Surface Mount Operating Temperature: 150°C Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 2.5A (Ta) Rds On (Max) @ Id, Vgs: 73mOhm @ 2A, 10V Power Dissipation (Max): 500mW (Ta) Vgs(th) (Max) @ Id: 2.6V @ 1mA Supplier Device Package: UF6 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 16 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 730 pF @ 15 V |
auf Bestellung 2641 Stücke: Lieferzeit 10-14 Tag (e) |
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SSM6J401TU,LF | Hersteller : Toshiba Semiconductor and Storage |
Description: MOSFET P-CH 30V 2.5A UF6 Packaging: Tape & Reel (TR) Package / Case: 6-SMD, Flat Leads Mounting Type: Surface Mount Operating Temperature: 150°C Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 2.5A (Ta) Rds On (Max) @ Id, Vgs: 73mOhm @ 2A, 10V Power Dissipation (Max): 500mW (Ta) Vgs(th) (Max) @ Id: 2.6V @ 1mA Supplier Device Package: UF6 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 16 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 730 pF @ 15 V |
Produkt ist nicht verfügbar |