auf Bestellung 36000 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Preis ohne MwSt |
|---|---|
| 3000+ | 0.11 EUR |
| 9000+ | 0.089 EUR |
| 24000+ | 0.08 EUR |
Produktrezensionen
Produktbewertung abgeben
Technische Details SSM3K376R,LF Toshiba
Description: MOSFET N-CH 30V 4A SOT23F, Packaging: Tape & Reel (TR), Package / Case: SOT-23-3 Flat Leads, Mounting Type: Surface Mount, Operating Temperature: 150°C, Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 4A (Ta), Rds On (Max) @ Id, Vgs: 56mOhm @ 2A, 4.5V, Power Dissipation (Max): 2W (Ta), Vgs(th) (Max) @ Id: 1V @ 1mA, Supplier Device Package: SOT-23F, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V, Vgs (Max): +12V, -8V, Drain to Source Voltage (Vdss): 30 V, Gate Charge (Qg) (Max) @ Vgs: 2.2 nC @ 4.5 V, Input Capacitance (Ciss) (Max) @ Vds: 200 pF @ 10 V.
Weitere Produktangebote SSM3K376R,LF nach Preis ab 0.08 EUR bis 0.67 EUR
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SSM3K376R,LF | Hersteller : Toshiba |
 Trans MOSFET N-CH Si 30V 4A 3-Pin SOT-23F T/R |
auf Bestellung 36000 Stücke: Lieferzeit 14-21 Tag (e) |
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SSM3K376R,LF | Hersteller : Toshiba Semiconductor and Storage |
Description: MOSFET N-CH 30V 4A SOT23F Packaging: Tape & Reel (TR) Package / Case: SOT-23-3 Flat Leads Mounting Type: Surface Mount Operating Temperature: 150°C Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 4A (Ta) Rds On (Max) @ Id, Vgs: 56mOhm @ 2A, 4.5V Power Dissipation (Max): 2W (Ta) Vgs(th) (Max) @ Id: 1V @ 1mA Supplier Device Package: SOT-23F Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V Vgs (Max): +12V, -8V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 2.2 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 200 pF @ 10 V |
auf Bestellung 33000 Stücke: Lieferzeit 10-14 Tag (e) |
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SSM3K376R,LF | Hersteller : Toshiba |
Trans MOSFET N-CH Si 30V 4A 3-Pin SOT-23F T/R |
auf Bestellung 826 Stücke: Lieferzeit 14-21 Tag (e) |
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SSM3K376R,LF | Hersteller : Toshiba Semiconductor and Storage |
Description: MOSFET N-CH 30V 4A SOT23F Packaging: Cut Tape (CT) Package / Case: SOT-23-3 Flat Leads Mounting Type: Surface Mount Operating Temperature: 150°C Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 4A (Ta) Rds On (Max) @ Id, Vgs: 56mOhm @ 2A, 4.5V Power Dissipation (Max): 2W (Ta) Vgs(th) (Max) @ Id: 1V @ 1mA Supplier Device Package: SOT-23F Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V Vgs (Max): +12V, -8V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 2.2 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 200 pF @ 10 V |
auf Bestellung 39944 Stücke: Lieferzeit 10-14 Tag (e) |
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SSM3K376R,LF | Hersteller : Toshiba |
Trans MOSFET N-CH Si 30V 4A 3-Pin SOT-23F T/R |
auf Bestellung 826 Stücke: Lieferzeit 14-21 Tag (e) |
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SSM3K376R,LF | Hersteller : Toshiba |
MOSFET LowON Res MOSFET ID=4A VDSS=30V |
auf Bestellung 29532 Stücke: Lieferzeit 10-14 Tag (e) |
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| SSM3K376R,LF | Hersteller : Toshiba |
Trans MOSFET N-CH Si 30V 4A Automotive 3-Pin SOT-23F T/R |
Produkt ist nicht verfügbar |