SSM3K35CT,L3F Toshiba Semiconductor and Storage
Hersteller: Toshiba Semiconductor and Storage
Description: MOSFET N-CH 20V 180MA CST3
Packaging: Tape & Reel (TR)
Package / Case: SC-101, SOT-883
Mounting Type: Surface Mount
Operating Temperature: 150°C
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 180mA (Ta)
Rds On (Max) @ Id, Vgs: 3Ohm @ 50mA, 4V
Power Dissipation (Max): 100mW (Ta)
Vgs(th) (Max) @ Id: 1V @ 1mA
Supplier Device Package: CST3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 1.2V, 4V
Vgs (Max): ±10V
Drain to Source Voltage (Vdss): 20 V
Input Capacitance (Ciss) (Max) @ Vds: 9.5 pF @ 3 V
Description: MOSFET N-CH 20V 180MA CST3
Packaging: Tape & Reel (TR)
Package / Case: SC-101, SOT-883
Mounting Type: Surface Mount
Operating Temperature: 150°C
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 180mA (Ta)
Rds On (Max) @ Id, Vgs: 3Ohm @ 50mA, 4V
Power Dissipation (Max): 100mW (Ta)
Vgs(th) (Max) @ Id: 1V @ 1mA
Supplier Device Package: CST3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 1.2V, 4V
Vgs (Max): ±10V
Drain to Source Voltage (Vdss): 20 V
Input Capacitance (Ciss) (Max) @ Vds: 9.5 pF @ 3 V
auf Bestellung 20000 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis ohne MwSt |
|---|---|
| 10000+ | 0.064 EUR |
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Technische Details SSM3K35CT,L3F Toshiba Semiconductor and Storage
Description: MOSFET N-CH 20V 180MA CST3, Packaging: Tape & Reel (TR), Package / Case: SC-101, SOT-883, Mounting Type: Surface Mount, Operating Temperature: 150°C, Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 180mA (Ta), Rds On (Max) @ Id, Vgs: 3Ohm @ 50mA, 4V, Power Dissipation (Max): 100mW (Ta), Vgs(th) (Max) @ Id: 1V @ 1mA, Supplier Device Package: CST3, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 1.2V, 4V, Vgs (Max): ±10V, Drain to Source Voltage (Vdss): 20 V, Input Capacitance (Ciss) (Max) @ Vds: 9.5 pF @ 3 V.
Weitere Produktangebote SSM3K35CT,L3F nach Preis ab 0.06 EUR bis 0.51 EUR
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SSM3K35CT,L3F | Hersteller : Toshiba |
 MOSFET Small Signal MOSFET N-ch VDSS=20V, VGSS=+/-10V, ID=0.18A, RDS(ON)=3.0ohm a. 4.0V, in CST3 package |
auf Bestellung 13320 Stücke: Lieferzeit 10-14 Tag (e) |
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SSM3K35CT,L3F | Hersteller : Toshiba Semiconductor and Storage |
Description: MOSFET N-CH 20V 180MA CST3 Packaging: Cut Tape (CT) Package / Case: SC-101, SOT-883 Mounting Type: Surface Mount Operating Temperature: 150°C Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 180mA (Ta) Rds On (Max) @ Id, Vgs: 3Ohm @ 50mA, 4V Power Dissipation (Max): 100mW (Ta) Vgs(th) (Max) @ Id: 1V @ 1mA Supplier Device Package: CST3 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 1.2V, 4V Vgs (Max): ±10V Drain to Source Voltage (Vdss): 20 V Input Capacitance (Ciss) (Max) @ Vds: 9.5 pF @ 3 V |
auf Bestellung 32987 Stücke: Lieferzeit 10-14 Tag (e) |
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