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SSM3K35AFS,LF

SSM3K35AFS,LF Toshiba Semiconductor and Storage

SSM3K35AFS_datasheet_en_20170217.pdf?did=55388&prodName=SSM3K35AFS Hersteller: Toshiba Semiconductor and Storage
Description: MOSFET N-CHANNEL 20V 250MA SSM
Packaging: Tape & Reel (TR)
Package / Case: SC-75, SOT-416
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 250mA (Ta)
Rds On (Max) @ Id, Vgs: 1.1Ohm @ 150mA, 4.5V
Power Dissipation (Max): 500mW (Ta)
Vgs(th) (Max) @ Id: 1V @ 100µA
Supplier Device Package: SSM
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 1.2V, 4.5V
Vgs (Max): ±10V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 0.34 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 36 pF @ 10 V
auf Bestellung 9000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
3000+0.068 EUR
6000+ 0.061 EUR
9000+ 0.057 EUR
Mindestbestellmenge: 3000
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Technische Details SSM3K35AFS,LF Toshiba Semiconductor and Storage

Description: MOSFET N-CHANNEL 20V 250MA SSM, Packaging: Tape & Reel (TR), Package / Case: SC-75, SOT-416, Mounting Type: Surface Mount, Operating Temperature: 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 250mA (Ta), Rds On (Max) @ Id, Vgs: 1.1Ohm @ 150mA, 4.5V, Power Dissipation (Max): 500mW (Ta), Vgs(th) (Max) @ Id: 1V @ 100µA, Supplier Device Package: SSM, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 1.2V, 4.5V, Vgs (Max): ±10V, Drain to Source Voltage (Vdss): 20 V, Gate Charge (Qg) (Max) @ Vgs: 0.34 nC @ 4.5 V, Input Capacitance (Ciss) (Max) @ Vds: 36 pF @ 10 V.

Weitere Produktangebote SSM3K35AFS,LF nach Preis ab 0.048 EUR bis 0.39 EUR

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Preis ohne MwSt
SSM3K35AFS,LF SSM3K35AFS,LF Hersteller : Toshiba Semiconductor and Storage SSM3K35AFS_datasheet_en_20170217.pdf?did=55388&prodName=SSM3K35AFS Description: MOSFET N-CHANNEL 20V 250MA SSM
Packaging: Cut Tape (CT)
Package / Case: SC-75, SOT-416
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 250mA (Ta)
Rds On (Max) @ Id, Vgs: 1.1Ohm @ 150mA, 4.5V
Power Dissipation (Max): 500mW (Ta)
Vgs(th) (Max) @ Id: 1V @ 100µA
Supplier Device Package: SSM
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 1.2V, 4.5V
Vgs (Max): ±10V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 0.34 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 36 pF @ 10 V
auf Bestellung 13197 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
50+0.35 EUR
86+ 0.21 EUR
138+ 0.13 EUR
500+ 0.093 EUR
1000+ 0.082 EUR
Mindestbestellmenge: 50
SSM3K35AFS,LF SSM3K35AFS,LF Hersteller : Toshiba SSM3K35AFS_datasheet_en_20170217-1128738.pdf MOSFET LowON Res MOSFET ID=.25A VDSS=20V
auf Bestellung 114748 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
8+0.39 EUR
11+ 0.27 EUR
100+ 0.11 EUR
1000+ 0.077 EUR
3000+ 0.06 EUR
9000+ 0.049 EUR
24000+ 0.048 EUR
Mindestbestellmenge: 8