SSM3K341R,LF Toshiba Semiconductor and Storage
Hersteller: Toshiba Semiconductor and StorageDescription: MOSFET N-CH 60V 6A SOT-23F
Packaging: Tape & Reel (TR)
Package / Case: SOT-23-3 Flat Leads
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 6A (Ta)
Rds On (Max) @ Id, Vgs: 36mOhm @ 5A, 10V
Power Dissipation (Max): 1.2W (Ta)
Vgs(th) (Max) @ Id: 2.5V @ 100µA
Supplier Device Package: SOT-23F
Drive Voltage (Max Rds On, Min Rds On): 4V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 9.3 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 550 pF @ 10 V
auf Bestellung 30000 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis ohne MwSt |
|---|---|
| 3000+ | 0.26 EUR |
| 6000+ | 0.24 EUR |
| 9000+ | 0.23 EUR |
| 15000+ | 0.21 EUR |
| 30000+ | 0.2 EUR |
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Technische Details SSM3K341R,LF Toshiba Semiconductor and Storage
Description: MOSFET N-CH 60V 6A SOT-23F, Packaging: Tape & Reel (TR), Package / Case: SOT-23-3 Flat Leads, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 175°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 6A (Ta), Rds On (Max) @ Id, Vgs: 36mOhm @ 5A, 10V, Power Dissipation (Max): 1.2W (Ta), Vgs(th) (Max) @ Id: 2.5V @ 100µA, Supplier Device Package: SOT-23F, Drive Voltage (Max Rds On, Min Rds On): 4V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 60 V, Gate Charge (Qg) (Max) @ Vgs: 9.3 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 550 pF @ 10 V.
Weitere Produktangebote SSM3K341R,LF nach Preis ab 0.16 EUR bis 1.11 EUR
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SSM3K341R,LF | Hersteller : Toshiba |
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SSM3K341R,LF | Hersteller : Toshiba |
Trans MOSFET N-CH Si 60V 6A 3-Pin SOT-23F T/R |
auf Bestellung 1100 Stücke: Lieferzeit 14-21 Tag (e) |
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SSM3K341R,LF | Hersteller : Toshiba Semiconductor and Storage |
Description: MOSFET N-CH 60V 6A SOT-23F Packaging: Cut Tape (CT) Package / Case: SOT-23-3 Flat Leads Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 6A (Ta) Rds On (Max) @ Id, Vgs: 36mOhm @ 5A, 10V Power Dissipation (Max): 1.2W (Ta) Vgs(th) (Max) @ Id: 2.5V @ 100µA Supplier Device Package: SOT-23F Drive Voltage (Max Rds On, Min Rds On): 4V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 9.3 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 550 pF @ 10 V |
auf Bestellung 31948 Stücke: Lieferzeit 10-14 Tag (e) |
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SSM3K341R,LF | Hersteller : Toshiba |
Trans MOSFET N-CH Si 60V 6A Automotive 3-Pin SOT-23F T/R |
Produkt ist nicht verfügbar |
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SSM3K341R,LF | Hersteller : Toshiba |
Trans MOSFET N-CH Si 60V 6A 3-Pin SOT-23F T/R |
Produkt ist nicht verfügbar |