![SSM3K318R,LF SSM3K318R,LF](https://mm.digikey.com/Volume0/opasdata/d220001/medias/images/4818/264%3BSOT23F-3%3B%3B3.jpg)
SSM3K318R,LF Toshiba Semiconductor and Storage
![SSM3K318R_datasheet_en_20160823.pdf?did=29655&prodName=SSM3K318R](/images/adobe-acrobat.png)
Description: MOSFET N-CH 60V 2.5A SOT23F
Packaging: Tape & Reel (TR)
Package / Case: SOT-23-3 Flat Leads
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 2.5A (Ta)
Rds On (Max) @ Id, Vgs: 107mOhm @ 2A, 10V
Power Dissipation (Max): 1W (Ta)
Vgs(th) (Max) @ Id: 2.8V @ 1mA
Supplier Device Package: SOT-23F
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 7 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 235 pF @ 30 V
auf Bestellung 15000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl | Preis ohne MwSt |
---|---|
3000+ | 0.2 EUR |
6000+ | 0.18 EUR |
9000+ | 0.17 EUR |
15000+ | 0.16 EUR |
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Technische Details SSM3K318R,LF Toshiba Semiconductor and Storage
Description: MOSFET N-CH 60V 2.5A SOT23F, Packaging: Tape & Reel (TR), Package / Case: SOT-23-3 Flat Leads, Mounting Type: Surface Mount, Operating Temperature: 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 2.5A (Ta), Rds On (Max) @ Id, Vgs: 107mOhm @ 2A, 10V, Power Dissipation (Max): 1W (Ta), Vgs(th) (Max) @ Id: 2.8V @ 1mA, Supplier Device Package: SOT-23F, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 60 V, Gate Charge (Qg) (Max) @ Vgs: 7 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 235 pF @ 30 V.
Weitere Produktangebote SSM3K318R,LF nach Preis ab 0.11 EUR bis 0.88 EUR
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SSM3K318R,LF | Hersteller : Toshiba |
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auf Bestellung 2452 Stücke: Lieferzeit 14-21 Tag (e) |
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SSM3K318R,LF | Hersteller : Toshiba |
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auf Bestellung 2452 Stücke: Lieferzeit 14-21 Tag (e) |
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SSM3K318R,LF | Hersteller : Toshiba |
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auf Bestellung 71285 Stücke: Lieferzeit 10-14 Tag (e) |
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SSM3K318R,LF | Hersteller : Toshiba Semiconductor and Storage |
![]() Packaging: Cut Tape (CT) Package / Case: SOT-23-3 Flat Leads Mounting Type: Surface Mount Operating Temperature: 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 2.5A (Ta) Rds On (Max) @ Id, Vgs: 107mOhm @ 2A, 10V Power Dissipation (Max): 1W (Ta) Vgs(th) (Max) @ Id: 2.8V @ 1mA Supplier Device Package: SOT-23F Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 7 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 235 pF @ 30 V |
auf Bestellung 19022 Stücke: Lieferzeit 10-14 Tag (e) |
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SSM3K318R,LF | Hersteller : Toshiba |
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Produkt ist nicht verfügbar |