SSM3K127TU,LF

SSM3K127TU,LF Toshiba Semiconductor and Storage


Hersteller: Toshiba Semiconductor and Storage
Description: MOSFET N-CH 30V 2A UFM
Packaging: Tape & Reel (TR)
Package / Case: 3-SMD, Flat Leads
Mounting Type: Surface Mount
Operating Temperature: 150°C
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 2A (Ta)
Rds On (Max) @ Id, Vgs: 123mOhm @ 1A, 4V
Power Dissipation (Max): 500mW (Ta)
Vgs(th) (Max) @ Id: 1V @ 1mA
Supplier Device Package: UFM
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 1.5 nC @ 4 V
Input Capacitance (Ciss) (Max) @ Vds: 123 pF @ 15 V
auf Bestellung 6000 Stücke:

Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
3000+0.15 EUR
Mindestbestellmenge: 3000
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Technische Details SSM3K127TU,LF Toshiba Semiconductor and Storage

Description: MOSFET N-CH 30V 2A UFM, Packaging: Tape & Reel (TR), Package / Case: 3-SMD, Flat Leads, Mounting Type: Surface Mount, Operating Temperature: 150°C, Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 2A (Ta), Rds On (Max) @ Id, Vgs: 123mOhm @ 1A, 4V, Power Dissipation (Max): 500mW (Ta), Vgs(th) (Max) @ Id: 1V @ 1mA, Supplier Device Package: UFM, Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4V, Vgs (Max): ±12V, Drain to Source Voltage (Vdss): 30 V, Gate Charge (Qg) (Max) @ Vgs: 1.5 nC @ 4 V, Input Capacitance (Ciss) (Max) @ Vds: 123 pF @ 15 V.

Weitere Produktangebote SSM3K127TU,LF nach Preis ab 0.14 EUR bis 0.65 EUR

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SSM3K127TU,LF SSM3K127TU,LF Hersteller : Toshiba Semiconductor and Storage Description: MOSFET N-CH 30V 2A UFM
Packaging: Cut Tape (CT)
Package / Case: 3-SMD, Flat Leads
Mounting Type: Surface Mount
Operating Temperature: 150°C
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 2A (Ta)
Rds On (Max) @ Id, Vgs: 123mOhm @ 1A, 4V
Power Dissipation (Max): 500mW (Ta)
Vgs(th) (Max) @ Id: 1V @ 1mA
Supplier Device Package: UFM
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 1.5 nC @ 4 V
Input Capacitance (Ciss) (Max) @ Vds: 123 pF @ 15 V
auf Bestellung 7614 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
31+0.58 EUR
40+ 0.44 EUR
100+ 0.27 EUR
500+ 0.25 EUR
1000+ 0.17 EUR
Mindestbestellmenge: 31
SSM3K127TU,LF SSM3K127TU,LF Hersteller : Toshiba SSM3K127TU_datasheet_en_20140301-1627329.pdf MOSFETs Small Signal MOSFET N-ch VDSS=30V, VGSS=+/-12V, ID=2.0A, RDS(ON)=0.123Ohm a. 4V, in UFM package
auf Bestellung 39582 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
5+0.65 EUR
10+ 0.46 EUR
100+ 0.24 EUR
1000+ 0.19 EUR
3000+ 0.15 EUR
24000+ 0.14 EUR
Mindestbestellmenge: 5
SSM3K127TU,LF SSM3K127TU,LF Hersteller : Toshiba 58docget.jsppidssm3k127tulangentypedatasheet.jsppidssm3k127tulangen.pdf Trans MOSFET N-CH Si 30V 2A 3-Pin UFM T/R
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