SSM3J56ACT,L3F Toshiba Semiconductor and Storage
Hersteller: Toshiba Semiconductor and Storage
Description: MOSFET P-CH 20V 1.4A CST3
Packaging: Tape & Reel (TR)
Package / Case: SC-101, SOT-883
Mounting Type: Surface Mount
Operating Temperature: 150°C
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 1.4A (Ta)
Rds On (Max) @ Id, Vgs: 390mOhm @ 800mA, 4.5V
Power Dissipation (Max): 500mW (Ta)
Vgs(th) (Max) @ Id: 1V @ 1mA
Supplier Device Package: CST3
Drive Voltage (Max Rds On, Min Rds On): 1.2V, 4.5V
Vgs (Max): ±8V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 1.6 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 100 pF @ 10 V
Description: MOSFET P-CH 20V 1.4A CST3
Packaging: Tape & Reel (TR)
Package / Case: SC-101, SOT-883
Mounting Type: Surface Mount
Operating Temperature: 150°C
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 1.4A (Ta)
Rds On (Max) @ Id, Vgs: 390mOhm @ 800mA, 4.5V
Power Dissipation (Max): 500mW (Ta)
Vgs(th) (Max) @ Id: 1V @ 1mA
Supplier Device Package: CST3
Drive Voltage (Max Rds On, Min Rds On): 1.2V, 4.5V
Vgs (Max): ±8V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 1.6 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 100 pF @ 10 V
auf Bestellung 10000 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis ohne MwSt |
|---|---|
| 10000+ | 0.12 EUR |
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Technische Details SSM3J56ACT,L3F Toshiba Semiconductor and Storage
Description: MOSFET P-CH 20V 1.4A CST3, Packaging: Tape & Reel (TR), Package / Case: SC-101, SOT-883, Mounting Type: Surface Mount, Operating Temperature: 150°C, Technology: MOSFET (Metal Oxide), FET Type: P-Channel, Current - Continuous Drain (Id) @ 25°C: 1.4A (Ta), Rds On (Max) @ Id, Vgs: 390mOhm @ 800mA, 4.5V, Power Dissipation (Max): 500mW (Ta), Vgs(th) (Max) @ Id: 1V @ 1mA, Supplier Device Package: CST3, Drive Voltage (Max Rds On, Min Rds On): 1.2V, 4.5V, Vgs (Max): ±8V, Drain to Source Voltage (Vdss): 20 V, Gate Charge (Qg) (Max) @ Vgs: 1.6 nC @ 4.5 V, Input Capacitance (Ciss) (Max) @ Vds: 100 pF @ 10 V.
Weitere Produktangebote SSM3J56ACT,L3F nach Preis ab 0.072 EUR bis 0.72 EUR
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SSM3J56ACT,L3F | Hersteller : Toshiba |
 Trans MOSFET P-CH 20V 1.4A 3-Pin CST T/R |
auf Bestellung 1799 Stücke: Lieferzeit 14-21 Tag (e) |
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SSM3J56ACT,L3F | Hersteller : Toshiba |
Trans MOSFET P-CH 20V 1.4A 3-Pin CST T/R |
auf Bestellung 1799 Stücke: Lieferzeit 14-21 Tag (e) |
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SSM3J56ACT,L3F | Hersteller : Toshiba Semiconductor and Storage |
Description: MOSFET P-CH 20V 1.4A CST3 Packaging: Cut Tape (CT) Package / Case: SC-101, SOT-883 Mounting Type: Surface Mount Operating Temperature: 150°C Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 1.4A (Ta) Rds On (Max) @ Id, Vgs: 390mOhm @ 800mA, 4.5V Power Dissipation (Max): 500mW (Ta) Vgs(th) (Max) @ Id: 1V @ 1mA Supplier Device Package: CST3 Drive Voltage (Max Rds On, Min Rds On): 1.2V, 4.5V Vgs (Max): ±8V Drain to Source Voltage (Vdss): 20 V Gate Charge (Qg) (Max) @ Vgs: 1.6 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 100 pF @ 10 V |
auf Bestellung 27574 Stücke: Lieferzeit 10-14 Tag (e) |
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SSM3J56ACT,L3F | Hersteller : Toshiba |
MOSFET Nch MOSFET |
auf Bestellung 28845 Stücke: Lieferzeit 10-14 Tag (e) |
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SSM3J56ACT,L3F | Hersteller : Toshiba |
Trans MOSFET P-CH 20V 1.4A 3-Pin CST T/R |
Produkt ist nicht verfügbar |