Technische Details SSM3J355R,LF(T Toshiba
Category: SMD P channel transistors, Description: Transistor: P-MOSFET; unipolar; -20V; -6A; Idm: 24A; 2W; SOT23F, Mounting: SMD, Case: SOT23F, Kind of package: reel; tape, Drain-source voltage: -20V, Drain current: -6A, On-state resistance: 52.3mΩ, Type of transistor: P-MOSFET, Power dissipation: 2W, Polarisation: unipolar, Features of semiconductor devices: ESD protected gate, Kind of channel: enhanced, Pulsed drain current: 24A, Gate-source voltage: ±10V, Anzahl je Verpackung: 5 Stücke.
Weitere Produktangebote SSM3J355R,LF(T
| Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
Preis ohne MwSt |
|---|---|---|---|---|---|
 |
SSM3J355R,LF(T | Hersteller : Toshiba |
 Trans MOSFET P-CH Si 20V 6A 3-Pin SOT-23F T/R |
Produkt ist nicht verfügbar |
|
| SSM3J355R,LF(T | Hersteller : TOSHIBA |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -20V; -6A; Idm: 24A; 2W; SOT23F Mounting: SMD Case: SOT23F Kind of package: reel; tape Drain-source voltage: -20V Drain current: -6A On-state resistance: 52.3mΩ Type of transistor: P-MOSFET Power dissipation: 2W Polarisation: unipolar Features of semiconductor devices: ESD protected gate Kind of channel: enhanced Pulsed drain current: 24A Gate-source voltage: ±10V Anzahl je Verpackung: 5 Stücke |
Produkt ist nicht verfügbar |
||
| SSM3J355R,LF(T | Hersteller : TOSHIBA |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -20V; -6A; Idm: 24A; 2W; SOT23F Mounting: SMD Case: SOT23F Kind of package: reel; tape Drain-source voltage: -20V Drain current: -6A On-state resistance: 52.3mΩ Type of transistor: P-MOSFET Power dissipation: 2W Polarisation: unipolar Features of semiconductor devices: ESD protected gate Kind of channel: enhanced Pulsed drain current: 24A Gate-source voltage: ±10V |
Produkt ist nicht verfügbar |