SSM3J16FU(TE85L,F) Toshiba Semiconductor and Storage
Hersteller: Toshiba Semiconductor and StorageDescription: SMALL LOW RON PCH MOSFETS VDSS:-
Packaging: Tape & Reel (TR)
Package / Case: SC-70, SOT-323
Mounting Type: Surface Mount
Operating Temperature: 150°C
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 100mA (Ta)
Rds On (Max) @ Id, Vgs: 8Ohm @ 10mA, 4V
Power Dissipation (Max): 150mW (Ta)
Vgs(th) (Max) @ Id: 1.1V @ 100µA
Supplier Device Package: USM
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4V
Vgs (Max): ±10V
Drain to Source Voltage (Vdss): 20 V
Input Capacitance (Ciss) (Max) @ Vds: 11 pF @ 3 V
auf Bestellung 3000 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis ohne MwSt |
|---|---|
| 3000+ | 0.11 EUR |
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Technische Details SSM3J16FU(TE85L,F) Toshiba Semiconductor and Storage
Description: SMALL LOW RON PCH MOSFETS VDSS:-, Packaging: Tape & Reel (TR), Package / Case: SC-70, SOT-323, Mounting Type: Surface Mount, Operating Temperature: 150°C, Technology: MOSFET (Metal Oxide), FET Type: P-Channel, Current - Continuous Drain (Id) @ 25°C: 100mA (Ta), Rds On (Max) @ Id, Vgs: 8Ohm @ 10mA, 4V, Power Dissipation (Max): 150mW (Ta), Vgs(th) (Max) @ Id: 1.1V @ 100µA, Supplier Device Package: USM, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4V, Vgs (Max): ±10V, Drain to Source Voltage (Vdss): 20 V, Input Capacitance (Ciss) (Max) @ Vds: 11 pF @ 3 V.
Weitere Produktangebote SSM3J16FU(TE85L,F) nach Preis ab 0.088 EUR bis 0.65 EUR
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SSM3J16FU(TE85L,F) | Hersteller : Toshiba |
Trans MOSFET P-CH Si 20V 0.1A 3-Pin USM T/R |
auf Bestellung 5569 Stücke: Lieferzeit 14-21 Tag (e) |
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SSM3J16FU(TE85L,F) | Hersteller : Toshiba Semiconductor and Storage |
Description: SMALL LOW RON PCH MOSFETS VDSS:- Packaging: Cut Tape (CT) Package / Case: SC-70, SOT-323 Mounting Type: Surface Mount Operating Temperature: 150°C Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 100mA (Ta) Rds On (Max) @ Id, Vgs: 8Ohm @ 10mA, 4V Power Dissipation (Max): 150mW (Ta) Vgs(th) (Max) @ Id: 1.1V @ 100µA Supplier Device Package: USM Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4V Vgs (Max): ±10V Drain to Source Voltage (Vdss): 20 V Input Capacitance (Ciss) (Max) @ Vds: 11 pF @ 3 V |
auf Bestellung 3000 Stücke: Lieferzeit 10-14 Tag (e) |
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SSM3J16FU(TE85L,F) | Hersteller : Toshiba |
Trans MOSFET P-CH Si 20V 0.1A 3-Pin USM T/R |
Produkt ist nicht verfügbar |
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| SSM3J16FU(TE85L,F) | Hersteller : Toshiba |
Trans MOSFET P-CH Si 20V 0.1A 3-Pin USM T/R |
Produkt ist nicht verfügbar |