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SSM3J133TU,LF Toshiba Semiconductor and Storage
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Description: MOSFET P-CH 20V 5.5A UFM
Packaging: Tape & Reel (TR)
Package / Case: 3-SMD, Flat Leads
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 5.5A (Ta)
Rds On (Max) @ Id, Vgs: 29.8mOhm @ 3A, 4.5V
Power Dissipation (Max): 500mW (Ta)
Vgs(th) (Max) @ Id: 1V @ 1mA
Supplier Device Package: UFM
Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V
Vgs (Max): ±8V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 12.8 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 840 pF @ 10 V
auf Bestellung 75000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl | Preis ohne MwSt |
---|---|
3000+ | 0.19 EUR |
6000+ | 0.18 EUR |
9000+ | 0.16 EUR |
75000+ | 0.15 EUR |
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Technische Details SSM3J133TU,LF Toshiba Semiconductor and Storage
Description: MOSFET P-CH 20V 5.5A UFM, Packaging: Tape & Reel (TR), Package / Case: 3-SMD, Flat Leads, Mounting Type: Surface Mount, Operating Temperature: 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: P-Channel, Current - Continuous Drain (Id) @ 25°C: 5.5A (Ta), Rds On (Max) @ Id, Vgs: 29.8mOhm @ 3A, 4.5V, Power Dissipation (Max): 500mW (Ta), Vgs(th) (Max) @ Id: 1V @ 1mA, Supplier Device Package: UFM, Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V, Vgs (Max): ±8V, Drain to Source Voltage (Vdss): 20 V, Gate Charge (Qg) (Max) @ Vgs: 12.8 nC @ 4.5 V, Input Capacitance (Ciss) (Max) @ Vds: 840 pF @ 10 V.
Weitere Produktangebote SSM3J133TU,LF nach Preis ab 0.16 EUR bis 0.7 EUR
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SSM3J133TU,LF | Hersteller : Toshiba |
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auf Bestellung 624 Stücke: Lieferzeit 14-21 Tag (e) |
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SSM3J133TU,LF | Hersteller : Toshiba |
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auf Bestellung 624 Stücke: Lieferzeit 14-21 Tag (e) |
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SSM3J133TU,LF | Hersteller : Toshiba |
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auf Bestellung 19031 Stücke: Lieferzeit 10-14 Tag (e) |
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SSM3J133TU,LF | Hersteller : Toshiba Semiconductor and Storage |
![]() Packaging: Cut Tape (CT) Package / Case: 3-SMD, Flat Leads Mounting Type: Surface Mount Operating Temperature: 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 5.5A (Ta) Rds On (Max) @ Id, Vgs: 29.8mOhm @ 3A, 4.5V Power Dissipation (Max): 500mW (Ta) Vgs(th) (Max) @ Id: 1V @ 1mA Supplier Device Package: UFM Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V Vgs (Max): ±8V Drain to Source Voltage (Vdss): 20 V Gate Charge (Qg) (Max) @ Vgs: 12.8 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 840 pF @ 10 V |
auf Bestellung 78177 Stücke: Lieferzeit 10-14 Tag (e) |
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SSM3J133TU,LF | Hersteller : Toshiba |
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Produkt ist nicht verfügbar |